AOP609 Alpha & Omega Semiconductor Inc, AOP609 Datasheet - Page 7

• Manufacturer Part Number: AOP609
• Description: MOSFET N/P-CH COMPL 60V 8-PDIP
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AOP609

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 4.7A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 4.7A, 3.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 7nC @ 10V
• Input Capacitance (ciss) @ Vds: 570pF @ 30V
• Power - Max: 2.5W
• Mounting Type: Through Hole
• Package / Case: 8-DIP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1142-1; 785-1142-1; 785-1142-5

AOP609
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
100.0
10.0
10
1.0
0.1
0.01
8
6
4
2
0
0.1
10
0.00001
0
1
0.1
T
R
limited
Figure 9: Maximum Forward Biased Safe
J(Max)
DS(ON)
Figure 7: Gate-Charge Characteristics
=150°C, T
D=T
T
R
2
J,PK
V
I
Operating Area (Note E)
θJA
D
DS
=-3.5A
0.0001
=50°C/W
on
=T
=-30V
1s
/T
A
10s
1
+P
A
=25°C
DM
4
-V
-Q
.Z
DS
θJA
g
(Volts)
0.1s
(nC)
Figure 11: Normalized Maximum Transient Thermal Impedance
.R
DC
0.001
θJA
6
Single Pulse
10ms
1ms
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
100µs
8
0.01
10µs
100
Pulse Width (s)
10
0.1
1200
1000
40
30
20
10
800
600
400
200
0
0.001
0
Figure 10: Single Pulse Power Rating Junction-to-
0
0.01
1
Figure 8: Capacitance Characteristics
C
oss
10
P
D
0.1
T
Ambient (Note E)
on
20
Pulse Width (s)
C
10
T
-V
rss
DS
1
30
(Volts)
C
iss
10
100
40
T
T
J(Max)
A
=25°C
=150°C
100
50
1000
1000
60