AOP609 Alpha & Omega Semiconductor Inc, AOP609 Datasheet - Page 6

• Manufacturer Part Number: AOP609
• Description: MOSFET N/P-CH COMPL 60V 8-PDIP
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AOP609

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 4.7A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 4.7A, 3.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 7nC @ 10V
• Input Capacitance (ciss) @ Vds: 570pF @ 30V
• Power - Max: 2.5W
• Mounting Type: Through Hole
• Package / Case: 8-DIP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1142-1; 785-1142-1; 785-1142-5

AOP609
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
120
110
100
90
80
200
180
160
140
120
100
80
60
30
25
20
15
10
5
0
0
2
0
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 3: On-Resistance vs. Drain Current and
3
2
Fig 1: On-Region Characteristics
1
4
Gate Voltage
5
4
-V
-V
2
25°C
-5.0V
-I
GS
DS
D
(A)
(Volts)
(Volts)
6
-6.0V
6
3
7
I
-10V
V
V
D
V
=-3.5A
GS
GS
GS
8
125°C
=-3.0V
=-10V
=-4.5V
8
4
-4.0V
-3.5V
-4.5V
9
10
10
5
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
15
12
9
6
3
0
1.8
1.6
1.4
1.2
0.8
0.6
0
2
1
-50
0.0
Figure 4: On-Resistance vs. Junction
-25
Figure 2: Transfer Characteristics
Figure 6: Body-Diode Characteristics
1
0.2
0
V
DS
Temperature (°C)
125°C
25
=-5V
2
Temperature
-V
125°C
V
I
0.4
GS
GS
D
-V
=-3.5A
(Volts)
=-10V
SD
50
(Volts)
25°C
3
75
25°C
0.6
V
100 125 150
I
D
GS
=-2.8A
=-4.5V
4
0.8
5
1.0