SI1029X-T1-GE3 Vishay, SI1029X-T1-GE3 Datasheet - Page 2
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SI1029X-T1-GE3
Manufacturer Part Number
SI1029X-T1-GE3
Description
MOSFET N/P-CH 60V SC89-6
Manufacturer
Vishay
Datasheet
1.SI1029X-T1-GE3.pdf
(8 pages)
Specifications of SI1029X-T1-GE3
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.4 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
305mA, 190mA
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
0.75nC @ 4.5V
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-89-6, SOT-563F, SOT-666
Transistor Polarity
N And P Channel
Continuous Drain Current Id
305mA
Drain Source Voltage Vds
60V
On Resistance Rds(on)
1.4ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI1029X-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1029X-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si1029X
Vishay Siliconix
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS (T
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State
Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
b
a
c
c
a
a
a
J
= 25 °C, unless otherwise noted)
Symbol
R
V
I
I
I
C
t
V
DS(on)
V
C
GS(th)
D(on)
Q
Q
C
t
GSS
DSS
OFF
g
Q
ON
DS
SD
oss
iss
rss
gd
fs
gs
g
V
V
I
D
DS
V
GS
V
I
D
V
- 165 mA, V
GS
V
DS
V
V
200 mA, V
DS
= - 30 V, V
DS
= - 10 V, I
DS
DS
= 10 V, I
= 10 V, V
V
V
V
V
V
V
= - 50 V, V
V
V
= - 25 V, V
V
I
V
= 50 V, V
V
V
V
GS
DS
V
DS
= 25 V, V
V
V
GS
I
S
V
DS
DS
V
DS
V
GS
S
DD
V
DS
GS
DS
DS
DS
DD
DS
DS
= - 200 mA, V
GS
DS
= 200 mA, V
GS
= - 10 V, I
= - 10 V, I
= - 10 V, V
= - 4.5 V, I
= 7.5 V, V
= - 10 V, V
= V
= 4.5 V, I
= - 25 V, R
= 0 V, V
= 10 V, V
= 10 V, I
= 10 V, I
= V
= - 50 V, V
= 30 V, R
= 0 V, I
= 0 V, V
= 50 V, V
= 0 V, I
D
D
N-Channel
P-Channel
GS
N-Channel
P-Channel
N-Channel
P-Channel
GS
GS
Test Conditions
= 500 mA, T
= - 500 mA, T
GS
GEN
GEN
GS
GS
GS
= - 15 V, I
GS
, I
= 4.5 V, I
, I
D
= 0 V, T
D
GS
= 0 V, f = 1 MHz
D
= 0 V, T
D
D
D
D
D
D
= 10 V, R
= - 10 V, R
GS
= 0 V, f = 1 MHz
GS
D
GS
GS
= - 250 µA
GS
= - 10 µA
L
= 500 mA
= - 500 mA
= 250 µA
GS
= 200 mA
= - 100 mA
= 200 mA
= 10 µA
L
GS
GS
= - 25 mA
= ± 10 V
= 150
GS
= ± 5 V
= - 4.5 V
= 150
= 4.5 V
= - 4.5 V
= - 10 V
= 0 V
= 0 V
= 0 V
= 0 V
D
D
J
J
J
= 250 mA
= 85 °C
= - 500 mA
= 85 °C
= 125 °C
J
g
= 125 °C
g
= 10
= 10
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
- 600
Min.
- 60
- 50
500
800
- 1
60
1
S10-2432-Rev. C, 25-Oct-10
1700
Typ.
200
100
750
260
225
460
75
30
23
10
15
20
20
35
Document Number: 71435
6
3
5
± 100
± 150
± 200
Max.
- 250
- 3.0
± 50
1.40
2.50
- 1.4
- 25
100
2.5
1.4
10
3
8
4
6
Unit
mA
ms
nA
pC
pF
ns
V
V