SI1029X-T1-GE3 Vishay, SI1029X-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI1029X-T1-GE3
• Description: MOSFET N/P-CH 60V SC89-6
• Manufacturer: Vishay

Specifications of SI1029X-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 305mA, 190mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.75nC @ 4.5V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-6, SOT-563F, SOT-666
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 305mA
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 1.4ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1029X-T1-GE3TR

P-CHANNEL TYPICAL CHARACTERISTICS (T
Document Number: 71435
S10-2432-Rev. C, 25-Oct-10
1.0
0.8
0.6
0.4
0.2
0.0
20
16
12
15
12
8
4
0
9
6
3
0
0.0
0
0
I
D
0.3
On-Resistance vs. Drain Current
= 500 mA
200
1
V
DS
Output Characteristics
Q
I - Drain Current (mA)
- Drain-to-Source Voltage (V)
g
D
0.6
- Total Gate Charge (nC)
V
8 V
GS
V
Gate Charge
400
GS
2
V
= 4.5 V
V
DS
= 5 V
GS
= 30 V
0.9
= 10 V
600
3
V
GS
1.2
= 10 V
V
800
DS
4
1.5
= 48 V
5 V
4 V
7 V
6 V
1000
1.8
5
A
= 25 °C, unless otherwise noted)
1200
900
600
300
1.8
1.5
1.2
0.9
0.6
0.3
0.0
40
32
24
16
8
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
- 25
V
GS
V
5
2
V
V
GS
Transfer Characteristics
T
GS
DS
0
= 10 V at 500 mA
J
= 0 V
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
10
4
T
J
50
= - 55 °C
Vishay Siliconix
V
GS
C
15
C
C
6
75
oss
iss
rss
= 4.5 V at 25 mA
125 °C
Si1029X
100
www.vishay.com
20
25 °C
8
125
150
25
10
5