SI1029X-T1-GE3 Vishay, SI1029X-T1-GE3 Datasheet - Page 7

• Manufacturer Part Number: SI1029X-T1-GE3
• Description: MOSFET N/P-CH 60V SC89-6
• Manufacturer: Vishay

Specifications of SI1029X-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 305mA, 190mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.75nC @ 4.5V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-6, SOT-563F, SOT-666
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 305mA
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 1.4ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1029X-T1-GE3TR

N- OR P-CHANNEL TYPICAL CHARACTERISTICS (T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71435.
Document Number: 71435
S10-2432-Rev. C, 25-Oct-10
0.01
0.1
2
1
10
-4
0.2
0.1
Duty Cycle = 0.5
0.05
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10
Single Pulse
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Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-2
Square Wave Pulse Duration (s)
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Notes:
1. Duty Cycle, D =
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3. T
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Vishay Siliconix
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thJA
100
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Si1029X
www.vishay.com
6
0
0
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