SI1029X-T1-GE3 Vishay, SI1029X-T1-GE3 Datasheet - Page 3
![MOSFET N/P-CH 60V SC89-6](/photos/5/42/54218/pkg_5880_sml.jpg)
SI1029X-T1-GE3
Manufacturer Part Number
SI1029X-T1-GE3
Description
MOSFET N/P-CH 60V SC89-6
Manufacturer
Vishay
Datasheet
1.SI1029X-T1-GE3.pdf
(8 pages)
Specifications of SI1029X-T1-GE3
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.4 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
305mA, 190mA
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
0.75nC @ 4.5V
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-89-6, SOT-563F, SOT-666
Transistor Polarity
N And P Channel
Continuous Drain Current Id
305mA
Drain Source Voltage Vds
60V
On Resistance Rds(on)
1.4ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI1029X-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1029X-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
N-CHANNEL TYPICAL CHARACTERISTICS (T
Document Number: 71435
S10-2432-Rev. C, 25-Oct-10
1.0
0.8
0.6
0.4
0.2
0.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
7
6
5
4
3
2
1
0
0.0
0
0
V
GS
V
GS
V
I
= 10 V thru 7 V
D
On-Resistance vs. Drain Current
DS
0.1
= 250 mA
= 4.5 V
200
= 10 V
1
V
DS
Output Characteristics
Q
- Drain-to-Source Voltage (V)
I
g
D
0.2
- Total Gate Charge (nC)
- Drain Current (mA)
Gate Charge
400
2
0.3
600
3
0.4
V
GS
800
= 10 V
4
6 V
0.5
5 V
4 V
3 V
1000
0.6
5
A
= 25 °C, unless otherwise noted)
1200
900
600
300
2.0
1.6
1.2
0.8
0.4
0.0
50
40
30
20
10
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
- 25
V
f = 1 MHz
C
GS
rss
1
= 0 V
5
V
Transfer Characteristics
GS
V
T
0
J
DS
C
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
C
oss
- Drain-to-Source Voltage (V)
iss
2
V
GS
25
Capacitance
10
= 10 V at 500 mA
50
T
3
Vishay Siliconix
J
= - 55 °C
15
75
4
V
at 200 mA
Si1029X
100
www.vishay.com
GS
125 °C
20
= 4.5 V
25 °C
5
125
150
25
6
3