SI1029X-T1-GE3 Vishay, SI1029X-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI1029X-T1-GE3
• Description: MOSFET N/P-CH 60V SC89-6
• Manufacturer: Vishay

Specifications of SI1029X-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 305mA, 190mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.75nC @ 4.5V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-6, SOT-563F, SOT-666
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 305mA
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 1.4ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1029X-T1-GE3TR

N-CHANNEL TYPICAL CHARACTERISTICS (T
Document Number: 71435
S10-2432-Rev. C, 25-Oct-10
1.0
0.8
0.6
0.4
0.2
0.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
7
6
5
4
3
2
1
0
0.0
0
0
V
GS
V
GS
V
I
= 10 V thru 7 V
D
On-Resistance vs. Drain Current
DS
0.1
= 250 mA
= 4.5 V
200
= 10 V
1
V
DS
Output Characteristics
Q
- Drain-to-Source Voltage (V)
I
g
D
0.2
- Total Gate Charge (nC)
- Drain Current (mA)
Gate Charge
400
2
0.3
600
3
0.4
V
GS
800
= 10 V
4
6 V
0.5
5 V
4 V
3 V
1000
0.6
5
A
= 25 °C, unless otherwise noted)
1200
900
600
300
2.0
1.6
1.2
0.8
0.4
0.0
50
40
30
20
10
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
- 25
V
f = 1 MHz
C
GS
rss
1
= 0 V
5
V
Transfer Characteristics
GS
V
T
0
J
DS
C
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
C
oss
- Drain-to-Source Voltage (V)
iss
2
V
GS
25
Capacitance
10
= 10 V at 500 mA
50
T
3
Vishay Siliconix
J
= - 55 °C
15
75
4
V
at 200 mA
Si1029X
100
www.vishay.com
GS
125 °C
20
= 4.5 V
25 °C
5
125
150
25
6
3