NDS9959 Fairchild Semiconductor, NDS9959 Datasheet - Page 3

• Manufacturer Part Number: NDS9959
• Description: MOSFET 2N-CH 50V 2A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of NDS9959

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 250pF @ 25V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 0.3 Ohms
• Forward Transconductance Gfs (max / Min): 2.7 S
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: +/- 2 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS9959TR

Electrical Characteristics
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
t
S
rr
Notes:
1. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
SD
P
design while R
Typical R
D
JA
t
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
R
a. 78
b. 125
c. 135
Scale 1 : 1 on letter size paper
T
JA
1a
J
J A
for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
T
Parameter
Maximum Continuos Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
A
t
o
CA
C/W when mounted on a 0.5 in
o
o
C/W when mounted on a 0.003 in
C/W when mounted on a 0.02 in
is determined by the user's board design.
R
J C
T
J
R
T
A
CA
t
I
2
D
t
R
2
DS ON
pad of 2oz cpper.
(T
2
2
pad of 2oz cpper.
A
pad of 2oz cpper.
= 25°C unless otherwise noted)
T
J
1b
Conditions
V
V
GS
GS
= 0 V, I
= 0V, I
F
S
= 1.25 A, dI
= 1.25 A
(Note 2)
F
/dt = 100 A/µs
1c
Min
0.84
Typ
JC
Max
100
1.8
1.2
is guaranteed by
NDS9959.SAM
Units
ns
A
V