NDS9959 Fairchild Semiconductor, NDS9959 Datasheet - Page 6

• Manufacturer Part Number: NDS9959
• Description: MOSFET 2N-CH 50V 2A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of NDS9959

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 250pF @ 25V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 0.3 Ohms
• Forward Transconductance Gfs (max / Min): 2.7 S
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: +/- 2 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS9959TR

Typical Electrical Characteristics
Figure 13. Transconductance Variation with Drain
4
3
2
1
0
0.005
0.002
0.001
0
0.05
0.02
0.01
0.5
0.2
0.1
0.0001
1
Current.
V
DS
1
= 15V
D = 0.5
0.2
0.1
2
0.05
I , DRAIN CURRENT (A)
Figure 15. Transient Thermal Response Curve
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
D
0.001
0.02
0.01
Single Pulse
depending on the circuit board design.
3
4
0.01
(continued)
T = -55°C
J
5
25°C
125°C
t , TIME (sec)
0.1
1
6
0.05
0.01
0.5
0.1
2 0
1 0
5
1
Figure 14. Maximum Safe Operating Area.
0.1
.
1
0.2
SINGLE PULSE
T
V
A
GS
= 25°C
= 10V
0.5
P(pk)
V
DS
T - T
Duty Cycle, D = t
1 0
, DRAIN-SOURCE VOLTAGE (V)
R
J
1
R
JA
t
1
A
JA
(t) = r(t) * R
t
= P * R
2
2
= See Note 1c
JA
1
5
/ t
JA
(t)
100
2
1 0
2 0
300
NDS9959.SAM
5 0
1 0 0