NDS9959 Fairchild Semiconductor, NDS9959 Datasheet - Page 4

MOSFET 2N-CH 50V 2A 8-SOIC

NDS9959

Manufacturer Part Number
NDS9959
Description
MOSFET 2N-CH 50V 2A 8-SOIC
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of NDS9959

Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
300 mOhm @ 1.5A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
250pF @ 25V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
0.3 Ohms
Forward Transconductance Gfs (max / Min)
2.7 S
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
+/- 2 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDS9959TR

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Typical Electrical Characteristics
1 2
1 0
8
6
4
2
0
12
10
1.8
1.6
1.4
1.2
0.8
0.6
0.4
2
8
6
4
2
0
2
1
Figure 3. On-Resistance Variation
Figure 5. Transfer Characteristics.
-50
0
Figure 1. On-Region Characteristics.
V
DS
V
I
D
G S
= 10V
with Temperature.
= 1.5A
-25
1
= 1 0 V
V
GS
V
4
GS
=10V
2
V
0
T , JUNCTION TEMPERATURE (°C)
DS
, GATE TO SOURCE VOLTAGE (V)
J
, DRAIN-SOURCE VOLTAGE (V)
2 5
3
6
9.0
4
5 0
T = -55°C
8.0
7 5
J
5
7.0
100
8
6
6.0
5.0
2 5
125
7
1 2 5
150
1 0
8
5
4
3
2
1
0
1.2
1.1
0.9
0.8
0.7
2.4
1.6
1.2
0.8
0
1
Figure 4. On-Resistance Variation with Drain
Figure 6. Gate Threshold Variation with
Figure 2. On-Resistance Variation with
-50
2
0
Current and Temperature.
Temperature.
-25
Gate Voltage and Drain Current.
2
2
V
GS
0
T , JUNCTION TEMPERATURE (°C)
J
= 6V
4
I
D
I
4
D
, DRAIN CURRENT (A)
2 5
, DRAIN CURRENT (A)
7.0V
6
5 0
6
T = 125°C
J
7 5
8.0V
8
25°C
8
-55°C
V
V
1 0 0
I
GS
D
9.0V
DS
=10 V
= 250µA
= V
1 0
1 0
1 2 5
GS
1 0 V
NDS9959.SAM
1 5 0
1 2
1 2

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