FDD3510H Fairchild Semiconductor, FDD3510H Datasheet
FDD3510H
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FDD3510H Summary of contents
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... Thermal Resistance, Junction to Case, Single Operation for Q2 θJC Package Marking and Ordering Information Device Marking Device FDD3510H FDD3510H ©2008 Fairchild Semiconductor Corporation FDD3510H Rev.C ® MOSFET General Description These dual N and P-Channel enhancement MOSFETs are produced using Fairchild Semiconductor’s = 4.3A D advanced PowerTrench = 4 ...
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... Rise Time r t Turn-Off Delay Time d(off) t Fall Time f Q Total Gate Charge g(TOT) Q Gate to Source Charge gs Q Gate to Drain “Miller” Charge gd FDD3510H Rev 25°C unless otherwise noted J Test Conditions I =250µ -250µ 250µA, referenced to 25° -250µ ...
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... Q Reverse Recovery Charge rr Notes determined with the device mounted on a 1in θJA by the user's board design Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. Starting T = 25°C, N-ch 3mH 5A FDD3510H Rev 25°C unless otherwise noted J Test Conditions -2. ...
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... JUNCTION TEMPERATURE ( , T J Figure 3. Normalized On Resistance vs Junction Temperature 20 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDD3510H Rev 25°C unless otherwise noted 4.5V GS µ PULSE DURATION = X s DUTY CYCLE = X%MAX 3. 100 125 150 ...
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... Unclamped Inductive Switching Capability 50 10 THIS AREA IS LIMITED DS(on) SINGLE PULSE T = MAX RATED 3.5 C/W θ 0.05 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDD3510H Rev 25°C unless otherwise noted J 1000 V = 50V 100 100us 10 1ms 10 10ms 100ms DC ...
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... DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - FDD3510H Rev 25°C unless otherwise noted J SINGLE PULSE 3.5 C/W θ RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve SINGLE PULSE C/W θ ...
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... PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX - 150 GATE TO SOURCE VOLTAGE (V) GS Figure 19. Transfer Characteristics FDD3510H Rev 25°C unless otherwise noted J = -4. -3.5V GS µ PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX -2. Figure 16. Normalized on-Resistance vs Drain 600 500 400 300 200 100 50 ...
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... Switching Capability THIS AREA IS LIMITED BY r ds(on) SINGLE PULSE T = MAX RATED 3.9 C/W θ DRAIN to SOURCE VOLTAGE (V) DS Figure 25. Forward Bias Safe Operating Area FDD3510H Rev 25°C unless otherwise noted -50V 100us 1ms 10ms 100ms DC 100 200 8 1000 100 f = 1MHz ...
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... R = 3.9 θ JC 0.001 - DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - FDD3510H Rev 25°C unless otherwise noted J C RECTANGULAR PULSE DURATION (s) Figure 27. Transient Thermal Response Curve SINGLE PULSE C/W θ Note RECTANGULAR PULSE DURATION (sec) Figure 28. Transient Thermal Response Curve ...
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... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDD3510H Rev.C Preliminary Datasheet FPS™ PDP-SPM™ F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource Programmable Active Droop™ ...