FDD3510H Fairchild Semiconductor, FDD3510H Datasheet - Page 7

• Manufacturer Part Number: FDD3510H
• Description: IC MOSFET DUAL N/P 80V DPAK-4
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD3510H

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 4.3A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 4.3A, 2.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 800pF @ 40V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (4 leads + tab)
• Configuration: Dual Common Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 10 V @ Q1
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.3 A @ Q1 or 2.8 A @ Q2
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD3510HTR

FDD3510H Rev.C
Typical Characteristics (Q2 P-Channel)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Figure 15. On- Region Characteristics
10
10
Figure 17. Normalized On-Resistance
8
6
4
2
0
8
6
4
2
0
Figure 19. Transfer Characteristics
-75
1
0
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
V
I
V
DS
D
GS
V
-50
= -2.8A
vs Junction Temperature
T
GS
= -5V
J
= -10V
= 25
= -10V
-V
-V
T
1
T
-25
J
DS
J
GS
,
o
= 150
JUNCTION TEMPERATURE (
2
C
,
, GATE TO SOURCE VOLTAGE (V)
DRAIN TO SOURCE VOLTAGE (V)
0
o
C
2
25
µ
T
V
s
J
GS
= -55
3
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
= -4.5V
50
o
3
C
75
o
4
100 125 150
V
C )
V
V
GS
4
GS
GS
= -2.5V
= -3.5V
= -3V
µ
s
5
5
T
J
= 25°C unless otherwise noted
7
Figure 16. Normalized on-Resistance vs Drain
0.001
0.01
600
500
400
300
200
100
2.5
2.0
1.5
1.0
0.5
0.1
10
1
0.0
Figure 18. On-Resistance vs Gate to
2
0
Forward Voltage vs Source Current
Figure 20. Source to Drain Diode
V
GS
V
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
-V
GS
Current and Gate Voltage
= 0V
0.2
-V
SD
= -2.5V
T
GS
, BODY DIODE FORWARD VOLTAGE (V)
2
J
, GATE TO SOURCE VOLTAGE (V)
= 150
-
I
4
D
Source Voltage
,
I
D
DRAIN CURRENT(A)
0.4
= -2.8A
o
C
4
V
GS
0.6
µ
6
= -3V
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
s
T
T
J
J
= 125
= 25
6
0.8
o
C
o
C
T
J
8
= -55
T
V
V
V
J
www.fairchildsemi.com
GS
GS
GS
8
= 25
1.0
= -4.5V
= -10V
o
= -3.5V
C
o
C
µ
s
1.2
10
10