FDD3510H Fairchild Semiconductor, FDD3510H Datasheet - Page 3
![IC MOSFET DUAL N/P 80V DPAK-4](/photos/5/44/54477/fdd3510h_sml.jpg)
FDD3510H
Manufacturer Part Number
FDD3510H
Description
IC MOSFET DUAL N/P 80V DPAK-4
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Specifications of FDD3510H
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
80 mOhm @ 4.3A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
4.3A, 2.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
800pF @ 40V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (4 leads + tab)
Configuration
Dual Common Drain Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.08 Ohm @ 10 V @ Q1
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.3 A @ Q1 or 2.8 A @ Q2
Power Dissipation
3100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD3510HTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDD3510H
Manufacturer:
FSC
Quantity:
20 000
Part Number:
FDD3510H
Manufacturer:
ON/安森美
Quantity:
20 000
FDD3510H Rev.C
Electrical Characteristics
Drain-Source Diode Characteristics
Notes:
1. R
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. Starting T
V
t
Q
rr
by the user's board design.
SD
rr
Symbol
θJA
is determined with the device mounted on a 1in
J
= 25°C, N-ch: L = 3mH, I
Q1
Q2
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
AS
Parameter
= 5A, V
DD
= 80V, V
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
a. 40°C/W when mounted on
a. 40°C/W when mounted on
Scale 1 : 1 on letter size paper
= 25°C unless otherwise noted
Scale 1 : 1 on letter size paper
a 1 in
a 1 in
GS
= 10V; P-ch: L = 3mH, I
2
2
pad of 2 oz copper
pad of 2 oz copper
V
V
Q1
I
Q2
I
F
F
GS
GS
= 4.3A, di/dt = 100A/s
= -2.8A, di/dt = 100A/s
= 0V, I
= 0V, I
Test Conditions
3
AS
S
S
= 2.6A
= -2.6A
= -6A, V
DD
= -80V, V
(Note 2)
(Note 2)
GS
= -10V.
θJC
Type
Q1
Q2
Q1
Q2
Q1
Q2
is guaranteed by design while R
b. 96°C/W when mounted on a
b. 96°C/W when mounted on a
minimum pad of 2 oz copper
Min
minimum pad of 2 oz copper
Typ
-0.8
0.8
29
30
28
30
Max
-1.2
www.fairchildsemi.com
1.2
46
48
45
48
θCA
is determined
Units
nC
ns
V