FDD3510H Fairchild Semiconductor, FDD3510H Datasheet - Page 2

• Manufacturer Part Number: FDD3510H
• Description: IC MOSFET DUAL N/P 80V DPAK-4
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD3510H

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 4.3A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 4.3A, 2.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 800pF @ 40V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (4 leads + tab)
• Configuration: Dual Common Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 10 V @ Q1
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.3 A @ Q1 or 2.8 A @ Q2
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD3510HTR

FDD3510H Rev.C
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
BV
∆BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
∆V
DSS
GSS
d(on)
r
d(off)
f
DS(on)
FS
GS(th)
iss
oss
rss
g
∆T
∆T
g(TOT)
gs
gd
Symbol
DSS
GS(th)
DSS
J
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Parameter
T
J
= 25°C unless otherwise noted
V
V
I
I
V
V
V
V
V
V
V
V
I
I
I
I
V
V
V
Q1
V
Q2
V
f = 1MHz
Q1
V
V
Q2
V
V
Q1
V
Q2
V
D
D
D
D
D
D
GS
GS
GS
GS
GS
GS
GS
GS
DD
DD
DS
DS
GS
DS
DS
DD
GS
DD
GS
GS
GS
= 250µA, referenced to 25°C
= -250µA, referenced to 25°C
=250µA, V
= -250µA, V
= 250µA, referenced to 25°C
= -250µA, referenced to 25°C
= V
= V
= 10V, I
= 6.0V, I
= 10V, I
= -10V, I
= -4.5V, I
= -10V, I
= 10V, I
= -5V, I
= 40V, V
= -40V, V
= 64V, V
= -64V, V
= ±20V, V
= 40V, I
= 10V, R
= -40V, I
= -10V, R
= 10V, V
= -10V, V
DS
DS
Test Conditions
, I
, I
2
D
D
D
D
D
D
D
GS
GS
D
D
D
GEN
DD
D
GS
D
DD
= -2.8A
GEN
= 4.3A,
GS
GS
GS
DS
= 4.3A
= 4.3A, T
= 4.3A
= 250µA
= -250µA
= -2.8A, T
= -2.8A,
= 4.1A
= -2.8A
= -2.6A
= 0V, f = 1MHZ
= 0V
= 40V, I
= 0V, f = 1MHZ
= -40V, I
= 0V
= 0V
= 0V
= 0V
= 6Ω
= 6Ω
J
D
J
= 125°C
D
= 125°C
= 4.3A
= -2.8A
Type
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Min
-80
-1.0
80
2.0
Typ
-67
-1.6
-6.7
600
660
121
153
184
259
84
2.6
4.6
6.8
1.7
7.2
2.3
1.9
3.2
2.9
64
70
15
56
50
27
25
16
25
13
14
7
6
2
3
2
5
±100
±100
Max
www.fairchildsemi.com
-3.0
152
190
224
322
800
880
4.0
-1
80
88
75
70
41
40
13
11
10
10
29
40
10
10
18
20
1
mV/°C
mV/°C
Units
mΩ
nC
nC
nC
µA
nA
nA
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S