FDD3510H Fairchild Semiconductor, FDD3510H Datasheet - Page 8

• Manufacturer Part Number: FDD3510H
• Description: IC MOSFET DUAL N/P 80V DPAK-4
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD3510H

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 4.3A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 4.3A, 2.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 800pF @ 40V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (4 leads + tab)
• Configuration: Dual Common Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 10 V @ Q1
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.3 A @ Q1 or 2.8 A @ Q2
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD3510HTR

Highly Integrated Green-Mode PWM Controller
© System General Corp.
Version 1.0.1 (IAO33.0083.B0)
70
68
66
64
62
60
104
102
100
98
96
94
-40
-40
Output Current from the RT pin (I
Frequency in nominal mode (F
-30
-30
-15
-15
0
0
Temperature (℃)
Temperature (℃)
25
25
OSC
50
50
RT
) vs Temperature
) vs Temperature
75
75
85
85
100
100
125
125
- 8 -
70
68
66
64
62
60
-40
-30
Maximum Duty Cycle (DCY
www.sg.com.tw • www.fairchildsemi.com
-15
0
Temperature (℃)
25
MAX
Product Specification
50
) vs Temperature
75
September 24, 2007
85
SG6742
100
125