TT8M2TR Rohm Semiconductor, TT8M2TR Datasheet - Page 4

• Manufacturer Part Number: TT8M2TR
• Description: MOSFET N/P-CH 30V 2.5A TSST8
• Manufacturer: Rohm Semiconductor

Specifications of TT8M2TR

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.5A, 4.5V
• Drain To Source Voltage (vdss): 30V, 20V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 3.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 180pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-TSST
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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TT8M2
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www.rohm.com
Electrical characteristics curves
2009 ROHM Co., Ltd. All rights reserved.
1000
1000
100
100
10
2.5
1.5
0.5
10
2
1
0
0.1
0.1
Fig.4 Static Drain-Source On-State
Fig.7 Static Drain-Source On-State
0
Ta= 25°C
Pulsed
V
Pulsed
GS
Fig.1 Typical Output Characteristics( Ⅰ )
= 2.5V
DRAIN-SOURCE VOLTAGE : V
DRAIN-CURRENT : I
DRAIN-CURRENT : I
Resistance vs. Drain Current( Ⅰ )
Resistance vs. Drain Current( Ⅳ )
0.2
V
V
V
V
V
0.4
GS
GS
GS
GS
GS
= 10V
= 4.5V
=4.0V
= 2.5V
= 2.0V
1
1
0.6
V
V
V
V
D
D
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
GS
GS
GS
[A]
[A]
GS
V
= 2.5V
= 4.0V
= 4.5V
= 1.2V
GS
= 1.5V
0.8
Ta=25°C
Pulsed
DS
[V]
10
10
1
1000
100
2.5
1.5
0.5
10
0.1
10
2
1
0
1
0.01
0
0.1
Fig.2 Typical Output Characteristics( Ⅱ )
V
Pulsed
V
Pulsed
GS
DS
DRAIN-SOURCE VOLTAGE : V
Fig.5 Static Drain-Source On-State
= 4.5V
= 10V
Fig.8 Forward Transfer Admittance
2
Resistance vs. Drain Current( Ⅱ )
DRAIN-CURRENT : I
vs. Drain Current
V
V
V
DRAIN-CURRENT : I
GS
GS
GS
0.1
= 4.5V
= 4.0V
= 2.5V
4
1
6
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
V
V
4/8
GS
1
GS
= 1.5V
= 1.2V
D
[A]
D
DS
[A]
Ta=25°C
Pulsed
8
[V]
10
10
10
0.001
1000
0.01
100
300
250
200
150
100
0.1
10
50
10
0
1
0.1
Fig.6 Static Drain-Source On-State
0
0
V
Pulsed
V
Pulsed
DS
GS
Fig.9 Static Drain-Source On-State
= 10V
= 4.0V
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
GATE-SOURCE VOLTAGE : V
Fig.3 Typical Transfer Characteristics
DRAIN-CURRENT : I
Resistance vs. Drain Current( Ⅲ )
GATE-SOURCE VOLTAGE : V
Resistance vs. Gate Source Voltage
2
0.5
4
I
D
I
D
= 1.2A
= 2.5A
1
1
D
6
[A]
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1.5
GS
Ta=25°C
Pulsed
8
[V]
GS
[V]
2009.06 - Rev.A
10
2
10
Data Sheet