TT8M2TR Rohm Semiconductor, TT8M2TR Datasheet - Page 7

• Manufacturer Part Number: TT8M2TR
• Description: MOSFET N/P-CH 30V 2.5A TSST8
• Manufacturer: Rohm Semiconductor

Specifications of TT8M2TR

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.5A, 4.5V
• Drain To Source Voltage (vdss): 30V, 20V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 3.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 180pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-TSST
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

○
TT8M2
c
www.rohm.com
2009 ROHM Co., Ltd. All rights reserved.
10000
1000
100
300
250
200
150
100
10
50
0
0.01
0
Ta=25°C
f=1MHz
V
GS
I
D
GATE-SOURCE VOLTAGE : -V
Fig.10 Static Drain-Source On-State
=0V
= -1.2A
Fig.13 Typical Capacitance
DRAIN-SOURCE VOLTAGE : -V
2
0.1
Resistance vs. Gate Source Voltage
Crss
vs. Drain-Source Voltage
4
I
D
= -2.5A
1
Coss
6
10
Ciss
GS
Ta=25°C
Pulsed
8
[V]
DS
[V]
10
100
10000
1000
100
0.01
10
0.1
10
1
1
0.01
0
V
Pulsed
GS
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
=0V
0.2
SOURCE-DRAIN VOLTAGE : -V
t
Fig.11 Reverse Drain Current
r
Fig.14 Switching Characteristics
DRAIN-CURRENT : -I
0.1
0.4
t
d
vs. Sourse-Drain Voltage
(off)
0.6
t
d
(on)
t
7/8
f
0.8
1
Ta=25°C
V
V
R
Pulsed
D
DD
GS
G
[A]
1
=10Ω
=-4.5V
= -10V
SD
[V]
1.2
10
5
4
3
2
1
0
0
2
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
4
6
8
10
Ta=25°C
V
I
R
Pulsed
D
DD
= -2.5A
G
=10Ω
12
= -10V
2009.06 - Rev.A
14
Data Sheet