TPCP8402(TE85L,F) Toshiba, TPCP8402(TE85L,F) Datasheet - Page 10

• Manufacturer Part Number: TPCP8402(TE85L,F)
• Description: MOSFET N/P-CH 30V 2-3V1G
• Manufacturer: Toshiba

Specifications of TPCP8402(TE85L,F)

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.2A, 3.4A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 470pF @ 10V
• Power - Max: 580mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

N-ch
100
0.1
10
0.1
1
Curves must be derated linearly
with increase in temperature.
* Single pulse
I D max (Pulse) *
Ta = 25°C
Drain−source voltage V
10 ms *
Safe operating area
1000
1
100
10
0.001
1
Single pulse
V DSS
10
0.01
max
1 ms *
DS
(V)
0.1
100
Pulse width t
10
r
th
1
– t
w
Device mounted on a glass-epoxy board (a) (Note 2a)
Device mounted on a glass-epoxy board (b) (Note 2b)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
w
(4)
(s)
10
100
(2)
(3)
(1)
1000
TPCP8402
2006-11-13