TPCP8402(TE85L,F) Toshiba, TPCP8402(TE85L,F) Datasheet - Page 8

• Manufacturer Part Number: TPCP8402(TE85L,F)
• Description: MOSFET N/P-CH 30V 2-3V1G
• Manufacturer: Toshiba

Specifications of TPCP8402(TE85L,F)

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.2A, 3.4A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 470pF @ 10V
• Power - Max: 580mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

N-ch
100
0.1
10
4
8
6
2
5
4
3
2
1
0
0
1
0
0
0
Common source
V DS = 10 V
Pulse test
Common source
V DS = 10 V
Pulse test
8.0
Drain−source voltage V
Gate−source voltage V
10
0.2
1
0.3
Drain current I
4.5
0.4
⎪Y
2
I
I
D
D
100
fs
3.8
– V
– V
⎪ – I
1
6.0
DS
GS
D
0.6
Ta = −55°C
3
D
Ta = −55°C
GS
25
Common source
Ta = 25°C
Pulse test
DS
(A)
3.5
25
3
V GS = 2.8 V
0.8
4
(V)
(V)
100
3.2
3.0
1.0
10
5
8
1.6
1.2
0.8
0.4
100
2.0
10
10
30
8
6
4
2
0
0
0.1
0
0
10
Drain−source voltage V
Gate−source voltage V
4.5
6.0
8.0
1
2
1
Drain current I
R
V
DS (ON)
2
4
I
DS
D
V GS = 10V
– V
– V
1
3.8
DS
3.5
GS
4.5
– I
3
2
6
D
D
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
Common source
Ta= 25℃
Pulse test
3.2
V GS = 2.8 V
I D = 4A
4
8
(V)
(V)
TPCP8402
3.0
2006-11-13
10
5
10