TPCP8402(TE85L,F) Toshiba, TPCP8402(TE85L,F) Datasheet - Page 9

• Manufacturer Part Number: TPCP8402(TE85L,F)
• Description: MOSFET N/P-CH 30V 2-3V1G
• Manufacturer: Toshiba

Specifications of TPCP8402(TE85L,F)

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.2A, 3.4A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 470pF @ 10V
• Power - Max: 580mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

N-ch
1000
120
100
100
60
40
80
20
10
1.6
2.0
1.2
0.8
0.4
−80
1
0
0.1
0
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
Common source
Pulse test
(1)
(2)
(3)
(4)
25
0.3
−40
Drain−source voltage V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
50
Capacitance – V
V GS = 4.5V
0
1
R
75
I D = 4, 2, 1A
DS (ON)
Device mounted on a glass-epoxy
board (a)
Device mounted on a glass-epoxy
board (b)
t = 5 s
P
(3) Single-device operation
(4) Single-device value at dual
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
D
100
40
operation
3
operation
– Ta
5
– Ta
125
80
10
V GS = 10V
DS
2A
DS
150
C oss
C rss
C iss
I D = 4A
120
(V)
30 50
1A
(Note 2a)
(Note 3b)
(Note 2b)
(Note 3a)
(Note 3b)
175
100
160
200
9
0.5
0.3
0.1
25
30
15
10
20
10
−80
5
3
1
3
2
1
0
5
0
0
0
12
6
Common source
V DS = 10 V
I D = 200μA
Pulse test
V DS
V DD = 24V
-0.2
Drain−source voltage V
10
−40
Ambient temperature Ta (°C)
Total gate charge Q
4
Dynamic input/output
-0.4
0
characteristics
5.0
I
DR
V
th
24
-0.6
– V
40
8
– Ta
V DD = 6V
DS
3.0
12
1.0
-0.8
80
g
DS
Common source
I D = 4.0A
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
(nC)
12
V GS = 0 V
-1.0
(V)
120
V GS
TPCP8402
2006-11-13
-1.2
160
16
10
15
5
0