TPC8405(TE12L,Q,M) Toshiba, TPC8405(TE12L,Q,M) Datasheet - Page 5

• Manufacturer Part Number: TPC8405(TE12L,Q,M)
• Description: MOSFET N/P-CH 30V SOP8 2-6J1E
• Manufacturer: Toshiba

Specifications of TPC8405(TE12L,Q,M)

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A, 4.5A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 1240pF @ 10V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 42 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Power Dissipation: 0.45 W, 0.75 W
• Mounting Style: Through Hole
• Gate Charge Qg: 40 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

P-ch
−10
−18
−15
−12
100
−8
−6
−4
−2
−9
−6
−3
10
−0.1
0
0
1
0
0
Common source
V DS = −10 V
Pulse test
Common source
V DS = −10 V
Pulse test
−10
−8
Drain−source voltage V
Gate−source voltage V
Ta = −55°C
−0.2
−1
Drain current I
Ta = −55°C
−6
25
−1
−0.4
−4
−2
I
I
|Y
D
D
fs
100
– V
– V
−3.2
| – I
DS
GS
−0.6
D
−2.8
−3
D
100
−10
GS
(A)
DS
Common source
Ta = 25°C
Pulse test
−2.6
−0.8
−4
25
V GS = −2 V
(V)
(V)
−2.1
−2.4
−2.3
−2.2
−100
−1.0
−5
5
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
−18
−15
−12
100
−9
−6
−3
10
−0.1
0
0
1
0
0
−10
−6
−1.3
Drain−source voltage V
Gate−source voltage V
−4 −3.2
−2
−1
Drain current I
−4
−1
R
−2
V
DS (ON)
I
DS
D
– V
−6
– V
−2.8
V GS = −4.5 V
DS
GS
– I
−3
D
D
−10
−8
−10
−2.6
Common source
Ta = 25°C
Pulse test
GS
(A)
Common source
Ta = 25°C
Pulse test
DS
Common source
Ta = 25°C
Pulse test
−2.4
V GS = −2 V
−2.3
−4
(V)
(V)
−10
I D = −4.5 A
−2.2
−2.1
2009-09-29
−2.2
TPC8405
−100
−12
−5