TPC8405(TE12L,Q,M) Toshiba, TPC8405(TE12L,Q,M) Datasheet - Page 6

• Manufacturer Part Number: TPC8405(TE12L,Q,M)
• Description: MOSFET N/P-CH 30V SOP8 2-6J1E
• Manufacturer: Toshiba

Specifications of TPC8405(TE12L,Q,M)

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A, 4.5A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 1240pF @ 10V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 42 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Power Dissipation: 0.45 W, 0.75 W
• Mounting Style: Through Hole
• Gate Charge Qg: 40 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

P-ch
10000
1000
100
2.0
1.6
1.2
0.8
0.4
10
50
40
30
20
10
−0.1
0
−80
0
0
(3)
(4)
(2)
(1)
V GS = −4.5 V
V GS = −10 V
Common source
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
−40
Drain−source voltage V
Ambient temperature Ta (
Ambient temperature Ta (
50
−1
0
R
DS (ON)
Device mounted on a glass-epoxy
board (a)
Device mounted on a glass-epoxy
board (b)
I D = −1.3 A, −2.2 A, −4.5 A
C – V
P
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
D
operation
100
40
– Ta
(3) Single-device operation
(4) Single-device value at dual
t = 10 s
I D = −1.3 A, −2.2 A, −4.5 A
DS
operation
– Ta
−10
80
DS
150
°
°
C)
(V)
C)
120
(Note 2a)
(Note 3b)
(Note 2b)
(Note 3a)
(Note 3b)
C iss
C oss
C rss
−100
160
200
6
−100
−0.1
−2.0
−1.6
−1.2
−0.8
−0.4
−10
−40
−30
−20
−10
−1
−80
0
0
0
0
Common source
I D = −4.5 A
Ta = 25°C
Pulse test
V DS
Drain−source voltage V
−40
0.2
Ambient temperature Ta (
10
Total gate charge Q
V GS
Dynamic input/output
−10
0.4
−6
0
characteristics
−1
20
I
DR
V
−5
th
−12
– V
0.6
40
– Ta
DS
−3
30
V DD = −24 V
0.8
80
g
Common source
V DS = −10 V
I D = −1 mA
Pulse test
DS
Common source
Ta = 25°C
Pulse test
V GS = 0 V
(nC)
40
°
(V)
C)
120
1.0
2009-09-29
TPC8405
160
1.2
50
−16
−12
−8
−4
0