UPA505T-T2-A Renesas Electronics America, UPA505T-T2-A Datasheet - Page 7

• Manufacturer Part Number: UPA505T-T2-A
• Description: MOSFET N/P-CH 50V 8-SOIC
• Manufacturer: Renesas Electronics America

Specifications of UPA505T-T2-A

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 Ohm @ 10mA, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 100mA
• Vgs(th) (max) @ Id: 1.8V @ 1µA
• Input Capacitance (ciss) @ Vds: 16pF @ 5V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

100
100
50
10
50
20
10
30
20
10
5
1
–30
0
10
1
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
V
Pulsed
measurement
GS
= 10 V
SWITCHING CHARACTERISTICS
0
t
d(off)
t
V
r
t
d(on)
T
GS
t
f
ch
20
- Gate to Source Voltage - V
- Channel Temperature - ˚C
30
I
D
5
- Drain Current - mA
10
60
90
50
I
Pulsed
measurement
D
V
V
R
= 10 mA
DD
GS
G
= 10
120
= 5 V
= 5 V
50
100
150
100
1000
500
100
100
100
0.1
0.1
50
10
10
10
10
1
1
0.1
0.4
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
V
f = 1 MHz
GS
= 0
0.5
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
V
SD
DS
- Source to Drain Voltage - V
- Drain to Source Voltage - V
I
0.6
D
50
1
- Drain Current - mA
100
0.7
0.8
10
T
–25 ˚C
V
Pulsed
measurement
A
25 ˚C
PA505T
GS
C
C
C
= 75 ˚C
oss
iss
rss
= 10 V
0.9
500
1000
100
1
5