UPA505T-T2-A Renesas Electronics America, UPA505T-T2-A Datasheet - Page 6

• Manufacturer Part Number: UPA505T-T2-A
• Description: MOSFET N/P-CH 50V 8-SOIC
• Manufacturer: Renesas Electronics America

Specifications of UPA505T-T2-A

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 Ohm @ 10mA, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 100mA
• Vgs(th) (max) @ Id: 1.8V @ 1µA
• Input Capacitance (ciss) @ Vds: 16pF @ 5V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

TYPICAL CHARACTERISTICS (T
• N-ch part
4
100
120
100
80
60
40
20
80
60
40
20
0
–30
0
3
2
1
0
Pulsed
measurement
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
GATE TO SOURCE CUT-OFF VOLTAGE
vs. CHANNEL TEMPERATURE
20
1
0
DRAIN CURRENT vs. DRAIN TO
SOURCE VOLTAGE
V
T
T
40
DS
C
ch
2
- Case Temperature - ˚C
- Drain to Source Voltage - V
- Channel Temperature - ˚C
30
60
3
80
60
4.0 V
4
100
90
V
5
GS
120
V
I
D
DS
A
= 2.5 V
= 1.0 A
3.0 V
3.5 V
120
= 5 V
= 25 ˚C)
140 160
6
150
7
1000
350
300
250
200
150
100
100
100
50
0.1
10
10
0
1
1
1
0
FORWARD TRANSFER ADMITTANCE
vs. DRAIN CURRENT
25
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TRANSFER CHARACTERISTICS
T
A
V
- Ambient Temperature - ˚C
GS
2
- Gate to Source Voltage - V
50
10
I
D
–25 ˚C
- Drain Current - mA
25 ˚C
T
–25 ˚C
25 ˚C
A
T
75
= 75 ˚C
A
4
= 75 ˚C
100
100
V
Pulsed
measurement
Free air
DS
6
125
V
= 5 V
DS
= 5 V
PA505T
1000
150
8