UPA679TB-T2-A Renesas Electronics America, UPA679TB-T2-A Datasheet - Page 10

• Manufacturer Part Number: UPA679TB-T2-A
• Description: MOSFET N/P-CH 20V SC-70
• Manufacturer: Renesas Electronics America

Specifications of UPA679TB-T2-A

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 570 mOhm @ 300mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 350mA, 250mA
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Input Capacitance (ciss) @ Vds: 28pF @ 10V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

8
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
4
3
2
1
0
- 0.01
4
3
2
1
0
- 0.01
4
3
2
1
0
-50
V
GS
= −2.5 V, I
T
ch
I
- Channel Temperature - °C
D
0
I
- Drain Current - A
D
- 0.1
- 0.1
- Drain Current - A
V
D
GS
= −0.15 A
V
GS
= −4.5 V, I
50
= −4.0 V, I
T
A
- 1
- 1
= 125°C
V
Pulsed
D
V
Pulsed
T
GS
−25°C
GS
−25°C
= −0.20 A
100
A
D
75°C
25°C
75°C
25°C
= 125°C
= −0.20 A
= −4.5 V
= −2.5 V
Pulsed
Data Sheet G16615EJ1V0DS
- 10
- 10
150
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
4
3
2
1
0
4
3
2
1
0
- 0.01
1
- 0.1
0
CAPACITANCE vs. DRAIN TO SOURCE
VOLTAGE
V
- 2
V
GS
DS
- Gate to Source Voltage - V
- Drain to Source Voltage - V
I
- 0.1
D
- 4
- 1
- Drain Current - A
- 6
- 8
- 10
- 1
V
f = 1.0 MHz
V
Pulsed
I
Pulsed
T
D
GS
GS
−25°C
A
= −0.20 A
75°C
25°C
µ µ µ µ PA679TB
= 125°C
= −4.0 V
= 0 V
- 10
C
C
C
iss
oss
rss
- 100
- 12
- 10