UPA679TB-T2-A Renesas Electronics America, UPA679TB-T2-A Datasheet - Page 5

• Manufacturer Part Number: UPA679TB-T2-A
• Description: MOSFET N/P-CH 20V SC-70
• Manufacturer: Renesas Electronics America

Specifications of UPA679TB-T2-A

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 570 mOhm @ 300mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 350mA, 250mA
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Input Capacitance (ciss) @ Vds: 28pF @ 10V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

(2) P-ch PART (T
Note Pulsed: PW ≤ 350 µ s, Duty cycle ≤ 2%
V
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Body Diode Forward Voltage
0
TEST CIRCUIT
GS(−)
τ = 1 s
Duty Cycle ≤ 1%
PG.
µ
τ
CHARACTERISTICS
R
G
D.U.T.
SWITCHING TIME
Note
A
= 25° ° ° ° C)
Note
R
V
DD
L
Note
V
Wave Form
V
Wave Form
GS
DS
SYMBOL
R
R
R
V
V
| y
I
C
t
t
I
DS(on)1
DS(on)2
DS(on)3
C
C
GS(off)
V
V
d(on)
d(off)
F(S-D)
DSS
GSS
V
t
t
oss
iss
rss
GS(−)
DS(−)
fs
r
f
0
DS
0
|
10%
t
d(on)
Data Sheet G16615EJ1V0DS
90%
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
R
I
F
t
on
DS
GS
DS
DS
GS
GS
GS
DS
GS
DD
GS
G
= 0.25 A, V
= 10 Ω
10% 10%
t
= −20.0 V, V
= m12.0 V, V
= −10.0 V, I
= −10.0 V, I
= −4.5 V, I
= −4.0 V, I
= −2.5 V, I
= −10.0 V
= 0 V
= −10.0 V, I
= −4.0 V
r
V
TEST CONDITIONS
t
GS
d(off)
t
GS
off
90%
D
D
D
D
D
D
= 0 V
= −0.20 A
= −0.20 A
= −0.15 A
90%
GS
t
DS
f
= −1.0 mA
= −0.20 A
= −0.20 A
= 0 V
= 0 V
−0.80
MIN.
0.2
−1.30
TYP.
1.17
1.25
2.25
0.88
0.6
29
15
23
39
50
33
3
−1.80
MAX.
−1.0
1.45
1.55
2.98
µ µ µ µ PA679TB
m10
UNIT
µ A
µ A
pF
pF
pF
ns
ns
ns
ns
Ω
Ω
Ω
V
S
V
3