UPA679TB-T2-A Renesas Electronics America, UPA679TB-T2-A Datasheet - Page 3

• Manufacturer Part Number: UPA679TB-T2-A
• Description: MOSFET N/P-CH 20V SC-70
• Manufacturer: Renesas Electronics America

Specifications of UPA679TB-T2-A

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 570 mOhm @ 300mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 350mA, 250mA
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Input Capacitance (ciss) @ Vds: 28pF @ 10V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

Document No. G16615EJ1V0DS00 (1st edition)
Date Published February 2003 NS CP(K)
Printed in Japan
DESCRIPTION
applications such as power switch of portable machine and so on.
FEATURES
• 2.5 V drive available
• Low on-state resistance
• Two MOS FET circuits in same size package as SC-70
ORDERING INFORMATION
Marking: YA
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation (2 units)
Channel Temperature
Storage Temperature
Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1%
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
Caution This product is electrostatic-sensitive device due to low ESD capability and shoud be handled with
The µ PA679TB is a switching device, which can be driven directly by a 2.5 V power source.
The µ PA679TB features a low on-state resistance and excellent switching characteristics, and is suitable for
N-ch
P-ch
PART NUMBER
2. Mounted on FR-4 board of 2500 mm
µ PA679TB
R
R
R
R
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
caution for electrostatic discharge.
V
DS(on)1
DS(on)3
DS(on)1
DS(on)3
ESD
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
= ± ± ± ± 100 V TYP. (C = 200 pF, R = 0 Ω Ω Ω Ω , Single pulse)
= 0.57 Ω MAX. (V
= 0.88 Ω MAX. (V
= 1.45 Ω MAX. (V
= 2.98 Ω MAX. (V
N/P-CHANNEL MOS FIELD EFFECT TRANSISTOR
Note1
DS
GS
= 0 V)
= 0 V)
Note2
GS
GS
GS
GS
= 4.5 V, I
= 2.5 V, I
= −4.5 V, I
= −2.5 V, I
SC-88 (SSP)
PACKAGE
I
D(pulse)
I
V
V
A
D(DC)
T
T
P
DSS
GSS
stg
ch
= 25°C)
FOR SWITCHING
T
DATA SHEET
D
D
2
D
D
= 0.30 A)
= 0.15 A)
x 1.1 mm
= −0.20 A)
= −0.15 A)
±0.35 / m0.25
±1.40 / m1.00
–55 to +150
±12 / m12
20 / −20
MOS FIELD EFFECT TRANSISTOR
150
0.2
°C
°C
W
V
V
A
A
PACKAGE DRAWING (Unit: mm)
6
1
0.65
0.2
PIN CONNECTION (Top View)
µ µ µ µ PA679TB
2.0 ±0.2
+0.1
-0
6
1
1.3
5
2
0.65
5
2
4
3
4
3
0.15
0.9 ±0.1
+0.1
-0.05
0.7
1.
2.
3.
4.
5.
6.
Source 1
Gate 1
Drain 2
Source 2
Gate 2
Drain 1
0 to 0.1
2003