UPA1981TE-T1-AT Renesas Electronics America, UPA1981TE-T1-AT Datasheet - Page 3

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UPA1981TE-T1-AT

Manufacturer Part Number
UPA1981TE-T1-AT
Description
MOSFET N/P-CH DUAL 20V SC-95
Manufacturer
Renesas Electronics America
Datasheet

Specifications of UPA1981TE-T1-AT

Fet Type
N and P-Channel
Fet Feature
Standard
Rds On (max) @ Id, Vgs
70 mOhm @ 2.8A, 5V
Drain To Source Voltage (vdss)
7V
Current - Continuous Drain (id) @ 25° C
2.8A
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Vgs(th) (max) @ Id
-
Document No. G17263EJ1V0DS00 (1st edition)
Date Published July 2004 NS CP(K)
Printed in Japan
DESCRIPTION
FEATURES
ORDERING INFORMATION
Marking: TZ
ABSOLUTE MAXIMUM RATINGS (T
Notes 1. Mounted on FR-4 Board of 2500 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
drives a large P-Channel MOS FET (Q2) in one tiny package (SC-95).
power management in portable electronic equipment where 2.5 to 8 V
input and 2.8 A output current capability are needed.
• V
• V
Source2 to Source1 Input Voltage Range
Gate1 to Source1 On Voltage Range
Drain2 Current (DC)
Drain2 Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
The
This load switch integrated a small N-Channel MOS FET (Q1), which
S2D2
S2D2
µ
PART NUMBER
2. PW ≤ 10
µ
PA1981 is a N-Channel/P-Channel MOS FET pair for compact
1 = 0.2 V MAX. (V
2 = 0.2 V MAX. (V
PA1981TE
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
µ
s, Duty Cycle ≤ 1%
Note1
Note2
Note1
S2S1
S2S1
N-CHANNEL/P-CHANNEL MOS FET PAIR
= 5.0 V, I
= 2.5 V, I
SC-95 (Mini Mold Thin Type)
PACKAGE
D2
D2
= −2.8 A, R
= −1.9 A, R
FOR LOAD SWITCH
A
I
= 25°C)
D2(pulse)
I
V
V
D2(DC)
DATA SHEET
T
T
2
S2S1
G1S1
P
stg
ch
x 1.6 mm, t ≤ 5 sec
T
D2S2(on)
D2S2(on)
−55 to +150
1.5 to 7.0
2.5 to 8.0
−10.0
−2.8
150
1.0
1 = 70 mΩ)
2 = 105 mΩ)
INTEGRATED LOAD SWITCH
°C
°C
W
V
V
A
A
0.32
+0.1
–0.05
6
1
PACKAGE DRAWING (Unit: mm)
PIN CONNECTION (Top View)
µ
5
2
0.95
2.9 ±0.2
1.9
PA1981
0.95
4
3
1. S1(Q1)
2. D2(Q2)
3. D2(Q2)
0.9 to 1.1
0.65
4. S2(Q2)
5. G1(Q1)
6. G2/D1
0.16
0 to 0.1
2004
+0.1
–0.06

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