UPA1981TE-T1-AT Renesas Electronics America, UPA1981TE-T1-AT Datasheet - Page 5

• Manufacturer Part Number: UPA1981TE-T1-AT
• Description: MOSFET N/P-CH DUAL 20V SC-95
• Manufacturer: Renesas Electronics America

Specifications of UPA1981TE-T1-AT

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 70 mOhm @ 2.8A, 5V
• Drain To Source Voltage (vdss): 7V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Vgs(th) (max) @ Id: -

TYPICAL CHARACTERISTICS (T
0.20
0.16
0.12
0.08
0.04
12
10
0
8
6
4
2
V
0
0
S2S1
ON-STATE VOLTAGE (Pch) vs.
DRAIN2 CURRENT
ON-STATE RESISTANCE (Pch) vs.
INPUT VOLTAGE
- Source2 to Source Input Voltage - V
1
-0.5
I
D2
1000
- Drain2 (Pch) Current - A
100
2
0.1
10
1
-1
1 m
3
T
ch
-1.5
4
= 125°C
Pulsed
V
V
Pulsed
I
V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
D2
S2S1
G1S1
G1S1
= −2.8 A
10 m
5
-2
= 5.0 V
= 1.5 to 7.0 V
= 1.5 to 7.0 V
A
= 25°C)
6
-2.5
25°C
7
100 m
Data Sheet G17263EJ1V0DS
-3
8
PW - Pulse Width - s
Single pulse
Mounted on FR-4 board of 2500 mm
1
0.20
0.16
0.12
0.08
0.04
14
12
10
10
0
8
6
4
2
0
-50 -25
0
ON-STATE VOLTAGE (Pch) vs.
CHANNEL TEMPERATURE
Pulsed
V
G1S1
ON-STATE RESISTANCE (Pch) vs.
CHANNEL TEMPERATURE
-0.5
T
I
ch
D2
= 1.5 to 7.0 V
T
- Channel Temperature - °C
100
- Drain2 (Pch) Current - A
ch
0
= 125°C
2
-1
x 1.6 mm
25
-1.5
50
1000
Pulsed
V
V
S2S1
G1S1
75
-2
V
I
D2
V
I
= 2.5 V
= 1.5 to 7.0 V
S2S1
D2
25°C
S2S1
= −1.9 A
100 125 150
= −2.8 A
= 2.5 V
µ
-2.5
= 5.0 V
PA1981
-3
3