UPA1981TE-T1-AT Renesas Electronics America, UPA1981TE-T1-AT Datasheet - Page 4

• Manufacturer Part Number: UPA1981TE-T1-AT
• Description: MOSFET N/P-CH DUAL 20V SC-95
• Manufacturer: Renesas Electronics America

Specifications of UPA1981TE-T1-AT

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 70 mOhm @ 2.8A, 5V
• Drain To Source Voltage (vdss): 7V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Vgs(th) (max) @ Id: -

ELECTRICAL CHARACTERISTICS (T
Note Pulsed: PW ≤ 350
CIRCUIT1 EXAMPLE OF APPLICATION CIRCUIT
RECOMMENDATION OF CIRCUIT1
2
+Vin
GND
OFF CHARACTERISTICS
Q2-S2 to D2 Leakage Current
Q1-D1 to S1 Leakage Current
ON CHARACTERISTICS
Q2-S2 to D2 Voltage
Q2-Static On-Resistance
Q2-S2 to D2 Current
Co ≤ 1
R1 is required to turn Q2 off.
Select R1 in the range of 10 to 470 kΩ.
CHARACTERISTICS
µ
Ci
F for applications
V
ON/OFF
G2/D1
S2
G1
Note
Note
R1
Note
µ
s, Duty Cycle ≤ 2%
µ PA1981
Q2
SYMBOL
R
R
S1
V
V
D2S2(on)
D2S2(on)
Q1
I
I
I
I
S2D2
S2D2
S2D2
S2D2
S2D2
D1S1
1
2
1
2
1
2
D2
A
= 25°C)
V
V
V
V
V
V
V
V
Co
Data Sheet G17263EJ1V0DS
S2D2
D1S1
S2S1
S2S1
G2S2
G2S2
S2D2
S2D2
= 8.0 V, V
= 8.0 V, V
= 5.0 V, V
= 2.5 V, V
= −5.0 V, I
= −2.5 V, I
= 0.2 V, V
= 0.2 V, V
TEST CONDITIONS
LOAD
G1S1
G1S1
G1S1
G1S1
S2S1
S2S1
D2
D2
= −2.8A
= −1.9 A
= 3.3 V, I
= 3.3 V, I
= 5.0 V, V
= 2.5 V, V
= 0 V
= 0 V
D2
D2
G1S1
G1S1
= −2.8 A
= −1.9 A
= 3.3 V
= 3.3 V
MIN.
2.8
1.9
TYP.
0.15
0.15
52
76
MAX.
105
1.0
1.0
0.2
0.2
70
µ
PA1981
UNIT
mΩ
mΩ
µ
µ
V
V
A
A
A
A