UPA2590T1H-T2-AT Renesas Electronics America, UPA2590T1H-T2-AT Datasheet - Page 4

• Manufacturer Part Number: UPA2590T1H-T2-AT
• Description: MOSFET N/P-CH 30V 8VSOF
• Manufacturer: Renesas Electronics America

Specifications of UPA2590T1H-T2-AT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 6.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 310pF @ 10V
• Power - Max: 1.24W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS (T
Notes 1. PW ≤ 10
EQUIVALENT CIRCUIT
Gate
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
2
Gate
Protection
Diode
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation (1 unit, 5 s)
Total Power Dissipation (2 units, 5 s)
Channel Temperature
Storage Temperature
2. Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mmt
caution for electrostatic discharge.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
N-channel
Source
Drain
PARAMETER
μ
Note1
Body
Diode
s, Duty Cycle ≤ 1%
DS
GS
= 0 V)
= 0 V)
Note2
Note2
Gate
Gate
Protection
Diode
A
P-channel
= 25°C)
Source
Drain
V
V
I
I
P
P
T
T
D(DC)
D(pulse)
ch
stg
DSS
GSS
T1
T2
Data Sheet G19217EJ1V0DS
SYMBOL
Body
Diode
N-CHANNEL
±4.5
±20
±18
30
−55 to +150
1.24
150
1.5
P-CHANNEL
m
m
m
−30
4.5
20
18
μ
UNIT
°C
°C
PA2590
W
W
V
V
A
A