UPA2590T1H-T2-AT Renesas Electronics America, UPA2590T1H-T2-AT Datasheet - Page 8

• Manufacturer Part Number: UPA2590T1H-T2-AT
• Description: MOSFET N/P-CH 30V 8VSOF
• Manufacturer: Renesas Electronics America

Specifications of UPA2590T1H-T2-AT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 6.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 310pF @ 10V
• Power - Max: 1.24W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
120
100
2.5
1.5
0.5
18
16
14
12
10
80
60
40
20
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
8
6
4
2
0
0
3
2
1
0
-50 -25
0.1
0
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Pulsed
V
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
GS
T
10 V
DS
0.4
ch
= 4.5 V
0
- Drain to Source Voltage - V
- Channel Temperature - °C
10 V
I
D
25
1
- Drain Current - A
0.8
V
GS
50
= 4.5 V
75 100 125 150 175
1.2
10
V
I
D
DS
= 1 mA
1.6
= 10 V
Pulsed
Data Sheet G19217EJ1V0DS
100
2
0.0001
0.001
0.01
100
200
180
160
140
120
100
0.1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0.1
10
10
80
60
40
20
1
1
0
0.01
FORWARD TRANSFER CHARACTERISTICS
0
0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
T
A
= −25°C
V
V
125°C
150°C
GS
GS
25°C
75°C
0°C
- Gate to Source Voltage - V
- Gate to Source Voltage - V
1
4
T
I
D
A
0.1
- Drain Current - A
= −25°C
25°C
0°C
125°C
150°C
2
8
75°C
1
V
Pulsed
12
V
Pulsed
3
μ
DS
DS
I
Pulsed
D
= 10 V
PA2590
= 10 V
= 2 A
10
16
4