BSO211P H Infineon Technologies, BSO211P H Datasheet - Page 4

• Manufacturer Part Number: BSO211P H
• Description: MOSFET 2P-CH 20V 4A 8DSO
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO211P H

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 67 mOhm @ 4.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 1.2V @ 25µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1095pF @ 15V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Package: SO-8
• Vds (max): -20.0 V
• Rds (on) (max) (@10v): -
• Rds (on) (max) (@4.5v): 67.0 mOhm
• Rds (on) (max) (@2.5v): 110.0 mOhm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev.1.3
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
10
2.5
1.5
0.5
10
10
10
3
2
1
0
DS
-1
2
1
0
A
10
0
); T
); t
-1
p
A
p
≤10 s
limited by on-state
resistance
=25 °C
40
2)
; D =0
10
0
T
V
A
DS
80
10 s
DC
[°C]
[V]
100 ms
1 ms
10 ms
10
100 µs
1
10 µs
120
160
10
page 4
2
2 Drain current
I
parameter: V
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJA
=f(T
=f(t
10
10
10
10
10
A
5
4
3
2
1
0
-1
-2
2
1
0
); t
10
0
p
)
-6
2)
p
≤10 s
10
GS
-5
p
/T
0.02
0.01
0.5
0.2
0.05
10
40
0.1
-4
single pulse
10
4.5 V
-3
T
t
A
10
p
80
[°C]
[s]
-2
10
-1
120
10
BSO211P H
0
10
1
2010-02-10
160
10
2