BSO211P H Infineon Technologies, BSO211P H Datasheet - Page 5

• Manufacturer Part Number: BSO211P H
• Description: MOSFET 2P-CH 20V 4A 8DSO
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO211P H

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 67 mOhm @ 4.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 1.2V @ 25µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1095pF @ 15V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Package: SO-8
• Vds (max): -20.0 V
• Rds (on) (max) (@10v): -
• Rds (on) (max) (@4.5v): 67.0 mOhm
• Rds (on) (max) (@2.5v): 110.0 mOhm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev.1.3
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
40
35
30
25
20
15
10
20
18
16
14
12
10
8
6
4
2
0
5
0
DS
GS
0.0
0
); T
); |V
5 V
1
j
=25 °C
j
GS
DS
0.5
4.5 V
|>2|I
4 V
2
3.5 V
D
3
1.0
|R
DS(on)max
4
V
V
DS
GS
1.5
5
[V]
[V]
25 °C
2 V
3 V
2.5 V
6
2.0
7
8
2.5
150 °C
9
3.0
10
page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
24
22
20
18
16
14
12
10
8
6
4
2
0
D
=f(I
100
0
); T
90
80
70
60
50
40
30
20
10
0
D
0
j
2
); T
=25 °C
GS
j
=25 °C
4
6
5
8
I
4.5 V
5 V
D
10
I
2.5 V
[A]
10 V
D
10
[A]
12
4.0 V
3.5 V
14
3.0 V
BSO211P H
15
16
10 V
18
2010-02-10
20
20