BSO211P H Infineon Technologies, BSO211P H Datasheet - Page 8

• Manufacturer Part Number: BSO211P H
• Description: MOSFET 2P-CH 20V 4A 8DSO
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO211P H

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 67 mOhm @ 4.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 1.2V @ 25µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1095pF @ 15V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Package: SO-8
• Vds (max): -20.0 V
• Rds (on) (max) (@10v): -
• Rds (on) (max) (@4.5v): 67.0 mOhm
• Rds (on) (max) (@2.5v): 110.0 mOhm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BSO211P H
Package Outline
PG-DSO-8: Outline
Footprint
Dimensions in mm
Rev.1.3
page 8
2010-02-10