AO4611 Alpha & Omega Semiconductor Inc, AO4611 Datasheet - Page 4

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AO4611

Manufacturer Part Number
AO4611
Description
MOSFET P-CH 60V 6.3A 8-SOIC
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AO4611

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
25 mOhm @ 6.3A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
6.3A, 4.9A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
58nC @ 10V
Input Capacitance (ciss) @ Vds
2300pF @ 30V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1203-2

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AO4611
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
100.0
10.0
10
1.0
0.1
8
6
4
2
0
0.01
0
0.1
0.1
10
0.00001
1
Figure 9: Maximum Forward Biased Safe
R
limited
DS(ON)
T
T
Figure 7: Gate-Charge Characteristics
J(Max)
A
=25°C
10
D=T
T
R
J,PK
=150°C
θJA
Operating Area (Note E)
=62.5°C/W
on
=T
V
I
0.0001
D
/T
DS
=6.3A
A
1
+P
=30V
20
DM
V
Q
DS
.Z
1s
g
θJA
10s
DC
(Volts)
(nC)
.R
Figure 11: Normalized Maximum Transient Thermal Impedance
θJA
0.001
30
10ms
0.1s
10
1ms
Single Pulse
100µs
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.01
10µs
100
50
Pulse Width (s)
0.1
40
30
20
10
3500
3000
2500
2000
1500
1000
0
0.001
500
Figure 10: Single Pulse Power Rating Junction-to-
0
0
0.01
1
C
oss
Figure 8: Capacitance Characteristics
5
P
D
C
0.1
rss
T
Ambient (Note E)
on
Pulse Width (s)
10
10
T
V
DS
1
(Volts)
15
C
iss
10
100
T
T
20
J(Max)
A
=25°C
=150°C
100
25
1000
1000
30

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