AO4611 Alpha & Omega Semiconductor Inc, AO4611 Datasheet - Page 6

no-image

AO4611

Manufacturer Part Number
AO4611
Description
MOSFET P-CH 60V 6.3A 8-SOIC
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AO4611

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
25 mOhm @ 6.3A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
6.3A, 4.9A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
58nC @ 10V
Input Capacitance (ciss) @ Vds
2300pF @ 30V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1203-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO4611
Manufacturer:
AOS
Quantity:
34 800
Part Number:
AO4611
Manufacturer:
AO
Quantity:
20 000
Company:
Part Number:
AO4611
Quantity:
1 290
AO4611
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
50
45
40
35
30
100
25
20
15
10
90
80
70
60
50
40
30
20
5
0
0
0
2
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 3: On-Resistance vs. Drain Current and
-10V
3
Fig 1: On-Region Characteristics
1
5
4
25°C
-6V
V
GS
Gate Voltage
=-4.5V
5
-4V
2
-V
-V
125°C
-I
DS
GS
D
10
(A)
(Volts)
(Volts)
6
3
V
7
I
V
D
GS
GS
=-4.9A
-3.5V
-3V
=-10V
=-2.5V
15
8
4
9
20
10
5
1.0E+01
1.0E+00
1.8
1.6
1.4
1.2
0.8
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
30
25
20
15
10
2
1
5
0
0
1
0.0
25
Figure 4: On-Resistance vs. Junction
1.5
Figure 2: Transfer Characteristics
Figure 6: Body-Diode Characteristics
0.2
50
Temperature (°C)
2
V
125°C
DS
Temperature
125°C
=-5V
-V
75
V
GS
I
0.4
D
-V
GS
=-4.9A
2.5
(Volts)
SD
=-10V
100
(Volts)
25°C
25°C
0.6
3
125
V
GS
I
D
=-4.4A
=-4.5V
3.5
150
0.8
175
4
1.0

Related parts for AO4611