AO4611 Alpha & Omega Semiconductor Inc, AO4611 Datasheet - Page 7

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AO4611

Manufacturer Part Number
AO4611
Description
MOSFET P-CH 60V 6.3A 8-SOIC
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AO4611

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
25 mOhm @ 6.3A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
6.3A, 4.9A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
58nC @ 10V
Input Capacitance (ciss) @ Vds
2300pF @ 30V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1203-2

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AO4611
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
100.0
10
8
6
4
2
0
10.0
1.0
0.1
0.01
0
0.1
10
0.00001
0.1
1
T
R
limited
Figure 9: Maximum Forward Biased Safe
J(Max)
DS(ON)
Figure 7: Gate-Charge Characteristics
10
=150°C, T
D=T
T
R
J,PK
θJA
Operating Area (Note E)
0.0001
=62.5°C/W
on
=T
V
I
1s
D
/T
DS
=-4.9A
A
1
A
10s
+P
=-30V
20
=25°C
Single Pulse
DM
-V
-Q
.Z
DS
g
θJA
(nC)
(Volts)
0.1s
.R
Figure 11: Normalized Maximum Transient Thermal Impedance
DC
0.001
θJA
30
10ms
10
1ms
100µs
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.01
10µs
100
50
Pulse Width (s)
0.1
3500
3000
2500
2000
1500
1000
40
30
20
10
500
0
0.001
0
Figure 10: Single Pulse Power Rating Junction-to-
0
1
C
0.01
Figure 8: Capacitance Characteristics
oss
10
P
D
0.1
T
Ambient (Note E)
on
20
Pulse Width (s)
C
10
T
-V
rss
C
DS
iss
1
30
(Volts)
10
100
40
T
T
J(Max)
A
=25°C
=150°C
100
50
1000
1000
60

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