BSO303P H Infineon Technologies, BSO303P H Datasheet

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BSO303P H

Manufacturer Part Number
BSO303P H
Description
MOSFET 2P-CH 30V 7A DSO-8
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of BSO303P H

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
21 mOhm @ 8.2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
2V @ 100µA
Gate Charge (qg) @ Vgs
49nC @ 10V
Input Capacitance (ciss) @ Vds
2678pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Package
SO-8
Vds (max)
-30.0 V
Rds (on) (max) (@10v)
21.0 mOhm
Rds (on) (max) (@4.5v)
32.0 mOhm
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Rev. 1.3
Features
• Dual P-Channel in SO8
• Enhancement mode
• Logic level
• 150°C operating temperature
• Qualified according JEDEC for target applications
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
BSO303P H
®
-P Small-Signal-Transistor
2)
Package
PG-DSO- 8
j
=25 °C, unless otherwise specified
1)
Marking
Symbol Conditions
I
I
E
V
P
T
D
D,pulse
303P
j
AS
GS
tot
, T
stg
T
T
T
I
T
JESD22-A114 HBM
D
page 1
C
C
C
A
=-8.2 A, R
=25 °C
Lead free
=25 °C
=70 °C
=25 °C
Yes
GS
Product Summary
V
R
I
D
=25 Ω
DS
DS(on),max
Halogen free
Yes
10 secs
-8.2
-6.6
V
V
1B (500V - 1kV)
GS
GS
SO 8
-55 ... 150
55/150/56
=-10V
=-4.5V
260 °C
Value
-32.8
±20
Packing
97
dry
2
steady state
-7.0
-5.8
BSO303P H
-8.2
-30
21
32
Unit
A
mJ
V
W
°C
V
mΩ
A
2010-02-10

Related parts for BSO303P H

BSO303P H Summary of contents

Page 1

... Yes Symbol Conditions I T =25 ° =70 ° =25 °C D,pulse C =25 Ω =-8 =25 °C tot stg JESD22-A114 HBM page 1 BSO303P H - =-10V 21 mΩ =-4. -8 Packing dry Value Unit 10 secs steady state -8.2 -7.0 A -6.6 -5.8 -32 ± -55 ... 150 °C 1B (500V - 1kV) 260 °C ...

Page 2

... =-250µA (BR)DSS =-100 µA GS(th =- DSS T =25 ° =- =150 ° =- GSS =-4 =-6.6 A DS(on =- =-8 |>2 DS(on)max =-6 (one layer, 70 µm thick) copper area for drain page 2 BSO303P H Values Unit min. typ. max K/W 110 150 - - -0.1 -1 µA - -10 -100 - - -100 2010-02-10 ...

Page 3

... Reverse recovery time Reverse recovery charge Rev. 1.3 Symbol Conditions C iss =- oss f =1 MHz C rss t d( d(off =- =-8 plateau =25 ° =-8 =25 ° =- =| /dt =100 A/µ page 3 BSO303P H Values min. typ. max. - 1785 2678 - 510 765 - 425 638 - Ω -14 -20 - -36 - -32.8 - -0.9 -1 Unit 2010-02-10 ...

Page 4

... Rev. 1.3 2 Drain current I =f 120 160 0 [° Max. transient thermal impedance Z =f(t thJS p parameter 100 µs 10 100 µ 0 0.01 10 100 0.00001 [V] DS page 4 BSO303P H |≥ 120 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.0001 0.001 0.01 0 [s] p 160 2010-02-10 ...

Page 5

... Typ. output characteristics I =f =25 ° parameter -4 Typ. transfer characteristics I =f |>2 DS(on)max parameter 150 ° Rev. 1.3 6 Typ. drain-source on resistance R =f(I DS(on) parameter - Typ. forward transconductance g =f ° [V] GS page 5 BSO303P =25 ° - [A] D =25 ° [ 2010-02-10 ...

Page 6

... Forward characteristics of reverse diode I =f parameter Ciss Coss 0 10 Crss - [V] DS page 6 BSO303P H =-100 µ max. typ. min. - 100 140 T [° 150 °C, 98% 25 °C, typ 150 °C, typ 25 °C, 98% 0 0.5 1 1.5 2 2.5 -V [V] SD 180 ...

Page 7

... Avalanche characteristics =25 Ω parameter: T j(start Drain-source breakdown voltage =-250 µ BR(DSS -60 - Rev. 1.3 14 Typ. gate charge V =f(Q GS parameter °C 4 100 °C 125 ° [µ 100 140 180 [°C] j page 7 BSO303P =-8.2 A pulsed gate - [nC] gate 40 2010-02-10 ...

Page 8

... Package Outline PG-DSO-8: Outline Rev. 1.3 page 8 BSO303P H 2010-02-10 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.3 page 9 BSO303P H 2010-02-10 ...

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