BSO303P H Infineon Technologies, BSO303P H Datasheet - Page 7

• Manufacturer Part Number: BSO303P H
• Description: MOSFET 2P-CH 30V 7A DSO-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO303P H

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 8.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 2V @ 100µA
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Input Capacitance (ciss) @ Vds: 2678pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Package: SO-8
• Vds (max): -30.0 V
• Rds (on) (max) (@10v): 21.0 mOhm
• Rds (on) (max) (@4.5v): 32.0 mOhm
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.3
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
10
10
10
35
34
33
32
31
30
29
28
27
26
AV
2
1
0
-60
=f(T
10
); R
0
j
GS
); I
j(start)
-20
=25 Ω
D
=-250 µA
10
20
1
T
t
AV
j
60
[°C]
[µs]
125 °C
100
10
2
100 °C
140
25 °C
180
10
page 7
3
14 Typ. gate charge
V
parameter: V
GS
=f(Q
10
8
6
4
2
0
0
gate
); I
DD
D
=-8.2 A pulsed
10
-6 V
-Q
gate
20
[nC]
-15 V
-24 V
30
BSO303P H
2010-02-10
40