BSO303P H Infineon Technologies, BSO303P H Datasheet - Page 6

• Manufacturer Part Number: BSO303P H
• Description: MOSFET 2P-CH 30V 7A DSO-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO303P H

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 8.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 2V @ 100µA
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Input Capacitance (ciss) @ Vds: 2678pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Package: SO-8
• Vds (max): -30.0 V
• Rds (on) (max) (@10v): 21.0 mOhm
• Rds (on) (max) (@4.5v): 32.0 mOhm
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.3
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
30
28
26
24
22
20
18
16
14
12
10
4
3
2
DS
=f(T
10000
1000
100
0
-60
); V
j
); I
GS
D
-20
=0 V; f =1 MHz
=-8.2 A; V
8
98 %
20
-V
GS
T
DS
=-10 V
j
60
Crss
[°C]
typ.
16
Ciss
[V]
Coss
100
24
140
180
page 6
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
2.5
1.5
0.5
10
10
10
=f(T
SD
2
1
0
-1
2
1
0
-60
)
0
j
); V
150 °C, typ
j
GS
-20
0.5
=V
25 °C, typ
DS
25 °C, 98%
20
; I
1
D
=-100 µA
-V
T
typ.
min.
j
SD
1.5
60
[°C]
max.
[V]
100
150 °C, 98%
2
BSO303P H
140
2.5
2010-02-10
180
3