FDR8305N Fairchild Semiconductor, FDR8305N Datasheet - Page 100
FDR8305N
Manufacturer Part Number
FDR8305N
Description
MOSFET N-CH DUAL 20V 4.5A SSOT-8
Manufacturer
Fairchild Semiconductor
Datasheet
1.EGP10A.pdf
(214 pages)
Specifications of FDR8305N
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
22 mOhm @ 4.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 4.5V
Input Capacitance (ciss) @ Vds
1600pF @ 10V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
8-SSOT, SuperSOT-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Small Signal Transistors – Digital Transistors (Continued)
FJX3012R
FJX3001R
FJX3002R
FJX3003R
FJX3004R
FJX3005R
FJX3006R
FJX3007R
FJX3008R
FJX3013R
FJX3014R
FJX3015R
SOT-323 PNP Configuration
FJX4009R
FJX4010R
FJX4011R
FJX4012R
FJX4001R
FJX4002R
FJX4003R
FJX4004R
FJX4005R
FJX4006R
FJX4007R
FJX4008R
FJX4013R
FJX4014R
TO-92 NPN Configuration
FJN3309R
FJN3310R
FJN3312R
FJN3301R
FJN3302R
FJN3303R
FJN3304R
Products
V
(V)
40
50
50
50
50
50
50
50
50
50
50
50
40
40
40
40
50
50
50
50
50
50
50
50
50
50
40
40
40
50
50
50
50
CEO
V
(V)
40
50
50
50
50
50
50
50
50
50
50
50
40
40
40
40
50
50
50
50
50
50
50
50
50
50
40
40
40
50
50
50
50
CBO
V
(V)
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
EBO
5
5
5
5
5
5
5
5
Max (A)
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
I
C
(KΩ)
4.7
4.7
2.2
4.7
2.2
4.7
4.7
4.7
2.2
4.7
4.7
4.7
R
47
10
22
47
10
22
47
10
22
47
10
22
47
10
22
47
10
47
10
22
47
1
(KΩ)
4.7
4.7
4.7
R
10
22
47
10
47
47
22
47
47
10
10
22
47
10
47
47
22
47
47
10
22
47
–
–
–
–
–
–
–
–
2
Min
100
100
100
100
100
100
100
100
20
30
56
68
30
68
68
56
68
68
33
20
30
56
68
30
68
68
56
68
68
20
30
56
68
2-95
Discrete Power Products –
Max
600
600
600
600
600
600
600
600
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
h
FE
@V
CE
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
(V) @I
C
10
10
10
10
10
10
1
5
5
5
5
5
5
5
5
5
1
1
1
1
5
5
5
5
5
5
5
5
1
1
1
5
5
(mA)
Bipolar Transistors and JFETs
Max (V)
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
V
@I
CE (sat)
C
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
(mA) @I
B
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
1
1
1
1
1
1
1
1
(mA)
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