FDR8305N Fairchild Semiconductor, FDR8305N Datasheet - Page 106

• Manufacturer Part Number: FDR8305N
• Description: MOSFET N-CH DUAL 20V 4.5A SSOT-8
• Manufacturer: Fairchild Semiconductor

Specifications of FDR8305N

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 4.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1600pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 8-SSOT, SuperSOT-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Small Signal Transistors – General Purpose Transistors (Continued)
FJV1845
KST5550
MMBT5550
KST5551
MMBT5551
KST43
KST42
MMBTA42
SOT-23 PNP Configuration
MMBT3640
MMBT5771
KST4126
MMBT4126
MMBT3702
KSA1298
BC808
BC858
BC859
KST4125
KSA1182
BCW61A
BCW61B
BCW61C
BCW61D
BCW30
BSR18A
KST3906
MMBT3906
BSR18B
KST4403
MMBT4403
BSR15
MMBT2907
BCW69
BCX71G
Products
V
CEO
120
140
150
160
160
200
300
300
12
15
25
25
25
25
25
30
30
30
30
32
32
32
32
32
40
40
40
40
40
40
40
40
45
45
(V)
V
CBO
120
160
180
300
160
180
200
300
12
15
25
25
40
30
30
30
30
30
35
32
32
32
32
32
40
40
40
40
40
40
60
60
50
45
(V)
V
EBO
5
6
6
6
6
6
6
6
4
4
4
4
5
5
5
5
5
4
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
(V)
Max (A)
0.05
0.6
0.6
0.6
0.6
0.5
0.5
0.5
0.2
0.2
0.2
0.2
0.8
0.8
0.8
0.1
0.1
0.2
0.5
0.1
0.1
0.1
0.1
0.5
0.2
0.2
0.2
0.5
0.6
0.6
0.8
0.8
0.1
I
–
C
Min
200
120
120
100
100
110
110
120
140
250
380
215
100
100
100
110
100
100
100
100
120
120
60
60
80
80
40
40
40
30
50
60
50
70
2-101
Discrete Power Products –
Max
1200
250
250
250
250
120
120
360
360
300
320
630
800
800
150
240
220
310
460
630
500
300
300
300
220
300
300
300
300
260
220
–
–
–
h
FE
@V
Bold = New Products (introduced January 2003 or later)
0.3
0.3
10
10
10
10
10
CE
6
5
5
5
5
1
1
5
1
1
5
5
1
1
5
5
5
5
5
1
1
1
1
2
2
5
5
(V) @I
C
100
100
100
150
150
150
150
10
10
10
10
30
30
30
10
10
50
10
10
10
10
1
2
2
2
2
2
2
2
2
2
2
2
2
(mA)
Bipolar Transistors and JFETs
Max (V)
0.25
0.25
0.25
0.65
0.65
0.25
0.55
0.55
0.55
0.55
0.75
0.75
0.55
0.3
0.2
0.2
0.5
0.5
0.5
0.6
0.6
0.4
0.4
0.4
0.7
0.4
0.3
0.4
0.4
0.4
0.4
1.6
1.6
0.3
V
@I
CE (sat)
C
500
500
100
100
100
500
500
500
500
10
50
50
50
50
20
20
20
50
50
50
50
50
50
50
50
50
50
10
50
50
50
50
10
50
(mA) @I
1.25
1.25
1.25
1.25
1.25
B
0.5
20
50
10
50
50
50
50
1
5
5
5
5
2
2
2
5
5
5
5
5
5
5
5
5
5
5
5
1
(mA)