FDR8305N Fairchild Semiconductor, FDR8305N Datasheet - Page 64

• Manufacturer Part Number: FDR8305N
• Description: MOSFET N-CH DUAL 20V 4.5A SSOT-8
• Manufacturer: Fairchild Semiconductor

Specifications of FDR8305N

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 4.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1600pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 8-SSOT, SuperSOT-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.fairchildsemi.com
TO-220F
FQPF85N06
FQPF65N06
FQPF50N06L
FQPF50N06
FQPF30N06L
FQPF30N06
FQPF20N06L
FQPF20N06
FQPF13N06L
FQPF13N06
FQPF44N08
FQPF17N08L
FQPF17N08
FQPF9N08
FQPF9N08L
IRLS540A
IRLS520A
IRLS510A
FQPF90N10V2
FQPF70N10
FQPF55N10
FQPF44N10
FQPF33N10
IRFS540A
FQPF33N10L
FQPF19N10
FQPF19N10L
IRFS530A
FQPF13N10
FQPF13N10L
IRFS520A
FQPF7N10
FQPF7N10L
IRFS510A
TO-220F N-Channel
Products
Min. (V)
BV
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
60
60
60
60
60
60
60
60
60
60
80
80
80
80
80
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.016
0.021
0.022
0.035
0.055
0.135
0.034
0.115
0.025
0.026
0.039
0.052
0.052
0.052
10V
0.01
0.04
0.06
0.11
0.21
0.21
0.01
0.11
0.18
0.18
0.35
0.35
0.1
0.1
0.1
0.2
0.4
–
–
–
R
0.025@5V
0.045@5V
0.115@5V
0.058@5V
0.055@5V
DS(ON)
0.07@5V
0.14@5V
0.23@5V
0.22@5V
0.44@5V
0.11@5V
0.38@5V
0.2@5V
4.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-59
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
24.5
11.5
38.4
10.2
146
GS
9.5
4.8
5.8
8.8
5.9
4.7
5.5
8.7
5.8
4.6
8.5
86
48
31
15
19
38
12
85
75
48
38
60
30
19
14
27
12
16
=5V
I
D
32.6
22.5
15.7
11.2
11.2
34.2
13.6
13.6
10.7
9.4
7.2
4.5
8.7
8.7
7.2
5.5
5.5
4.5
53
40
31
21
15
10
25
17
90
35
27
18
17
18
7
7
(A)
MOSFETs
P
D
62
56
47
47
38
39
30
30
24
24
41
30
30
23
23
44
30
23
83
62
60
55
41
39
41
38
38
32
30
30
28
23
23
21
(W)