FDR8305N Fairchild Semiconductor, FDR8305N Datasheet - Page 68

• Manufacturer Part Number: FDR8305N
• Description: MOSFET N-CH DUAL 20V 4.5A SSOT-8
• Manufacturer: Fairchild Semiconductor

Specifications of FDR8305N

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 4.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1600pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 8-SSOT, SuperSOT-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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TO-220F (Continued)
FQPF6N80C
FQPF5N80
FQPF4N80
FQPF3N80C
FQPF3N80
FQPF2N80
FQPF9N90C
FQPF8N90C
FQPF5N90
FQPF6N90C
FQPF4N90
FQPF4N90C
FQPF3N90
FQPF2NA90
FQPF2N90
FQPF3P50
FQPF1P50
FQPF4P40
FQPF2P40
FQPF9P25
SFS9644
FQPF6P25
SFS9634
SFS9624
FQPF2P25
SFS9614
FQPF12P20
SFS9640
FQPF7P20
SFS9630
FQPF5P20
SFS9620
FQPF3P20
SFS9610
TO-220F P-Channel
Products
Min. (V)
BV
--400
-500
-500
-400
-250
-250
-250
-250
-250
-250
-250
-200
-200
-200
-200
-200
-200
-200
-200
800
800
800
800
800
800
900
900
900
900
900
900
900
900
900
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
10V
4.25
10.5
0.62
0.47
0.69
2.5
2.6
3.6
4.8
6.3
1.4
1.9
2.3
2.3
3.1
4.2
5.8
7.2
4.9
3.1
6.5
0.8
1.1
1.3
2.4
0.5
0.8
1.4
1.5
2.7
5
4
4
3
R
DS(ON)
4.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-63
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
6.5
21
25
19
13
15
12
45
35
31
30
24
17
20
15
12
18
11
18
10
29
45
21
29
16
31
46
19
29
10
15
6
9
9
=5V
I
D
5.5
2.8
2.2
1.8
1.5
2.5
2.1
1.7
1.4
1.9
2.4
1.3
4.9
4.2
3.4
2.4
1.8
1.3
7.3
6.2
5.2
4.4
3.4
2.2
1.4
3
8
6
3
6
4
1
6
3
(A)
MOSFETs
P
D
51
47
43
39
39
35
68
60
51
56
47
47
43
39
35
39
28
39
28
50
40
45
33
28
32
13
50
40
45
33
38
28
32
13
(W)