NDH8304P Fairchild Semiconductor, NDH8304P Datasheet
NDH8304P
Specifications of NDH8304P
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NDH8304P Summary of contents
Page 1
... High density cell design for extremely low R Exceptional on-resistance and maximum DC current capability NDH8304P (Note 1) (Note 1) (Note 1) (Note 1) May 1997 = 0. -4 0.095 @ package design using copper . DS(ON Units -20 V ±8 V -2.7 A -10 0.8 W -55 to 150 °C 156 °C/W 40 °C/W NDH8304P Rev.C ...
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... - 1.0 MHz -4 GEN Min Typ Max - 55°C J 100 -100 -0.4 -0 125°C -0.3 -0.5 -0.8 J 0.061 0. 125°C 0.087 0.125 J 0.082 0.095 - 865 415 150 150 55 100 16 23 2.4 5.1 NDH8304P Rev.C Units V µA µ ...
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... FR-4 PCB in a still air environment 156 C/W when mounted on a 0.0025 in pad of 2oz copper. Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0 25°C unless otherwise noted) A Conditions -0. Min Typ -0.7 (Note 2) Max Units -0. guaranteed by JC NDH8304P Rev.C ...
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... Figure 6. Gate Threshold Variation with = -2.0V GS -2.5 -2.7 -3 DRAIN CURRENT (A) D Voltage and Drain Current. = -4. 125°C J 25°C -55° - DRAIN CURRENT ( -250µ JUNCTION TEMPERATURE (°C) J Temperature. -4.5 -15 - NDH8304P Rev.C ...
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... C iss 3 C oss 2 C rss Figure 10. Gate Charge Characteristics. t d(on OUT Figure 12. Switching Waveforms 125°C J 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE ( -5V = -2.7A DS -15V GATE CHARGE (nC off t t d(off PULSE WIDTH 1 1.2 . -10V INVERTED NDH8304P Rev.C ...
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... Figure 14. Maximum Safe Operating Area. 0.01 0 TIME (sec -4.5V GS SINGLE PULSE R = See Note 25° 0 DRAIN-SOURCE VOLTAGE ( ( ( See Note 1 = See Note P(pk) P(pk (t) ( Duty Cycle Duty Cycle NDH8304P Rev.C ...