NDH8304P Fairchild Semiconductor, NDH8304P Datasheet - Page 3

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NDH8304P

Manufacturer Part Number
NDH8304P
Description
MOSFET P-CH DUAL 20V 2.7A SSOT8
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of NDH8304P

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
70 mOhm @ 2.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 4.5V
Input Capacitance (ciss) @ Vds
865pF @ 10V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
8-SSOT, SuperSOT-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NDH8304P
Manufacturer:
SIEMENS
Quantity:
830
Part Number:
NDH8304P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Notes:
ELECTRICAL CHARACTERISTICS
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
S
1. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
SD
design while R
P
Typical R
D
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
t
JA
R
T
J
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
156
JA
Scale 1 : 1 on letter size paper
Parameter
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
T
CA
A
t
o
C/W when mounted on a 0.0025 in
is determined by the user's board design.
R
JC
T
J
R
T
A
C A
t
I
2
D
t
R
DS ON
2
pad of 2oz copper.
(T
A
T
J
= 25°C unless otherwise noted)
Conditions
V
GS
= 0 V, I
S
= -0.67 A
(Note 2)
Min
Typ
-0.7
-0.67
Max
JC
-1.2
is guaranteed by
NDH8304P Rev.C
Units
A
V

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