NDH8304P Fairchild Semiconductor, NDH8304P Datasheet - Page 5

• Manufacturer Part Number: NDH8304P
• Description: MOSFET P-CH DUAL 20V 2.7A SSOT8
• Manufacturer: Fairchild Semiconductor

Specifications of NDH8304P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 70 mOhm @ 2.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 865pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 8-SSOT, SuperSOT-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Electrical Characteristics
V
GS
2 5 0 0
1 5 0 0
1 0 0 0
1.08
1.06
1.04
1.02
0.98
0.96
0.94
Figure 7. Breakdown Voltage Variation with
5 0 0
3 0 0
2 0 0
1 0 0
1.1
Figure 9. Capacitance Characteristics.
Figure 11. Switching Test Circuit
1
-50
0 .1
I
D
Temperature.
R
= -250µA
f = 1 MHz
V
GEN
-25
GS
0 .2
= 0 V
-V
T
0
DS
V
J
, JUNCTION TEMPERATURE (°C)
IN
0 .5
, DRAIN TO SOURCE VOLTAGE (V)
G
25
1
50
-V
D
S
DD
2
75
R
L
.
D U T
100
5
C iss
C oss
C rss
125
V
1 0
O U T
150
2 0
V
t
V
OUT
d(on)
IN
0 . 0 0 0 1
0.001
5
4
3
2
1
0
1 0 %
0.01
Figure 10. Gate Charge Characteristics.
0
0.5
0.1
Figure 8. Body Diode Forward Voltage
1 0
Variation with Current and Temperature
3
1
Figure 12. Switching Waveforms.
I
D
0
= -2.7A
V
GS
t
5 0 %
= 0V
o n
1 0 %
0.2
-V
SD
5
t
, BODY DIODE FORWARD VOLTAGE (V)
9 0 %
PULSE WIDTH
r
Q
T = 125°C
0.4
g
J
, GATE CHARGE (nC)
25°C
t
1 0
d(off)
0.6
-55°C
V
DS
5 0 %
= -5V
0.8
9 0 %
t
1 5
1 0 %
off
9 0 %
-15V
1
NDH8304P Rev.C
.
INVERTED
t
-10V
f
1.2
2 0