NDH8304P Fairchild Semiconductor, NDH8304P Datasheet - Page 4

• Manufacturer Part Number: NDH8304P
• Description: MOSFET P-CH DUAL 20V 2.7A SSOT8
• Manufacturer: Fairchild Semiconductor

Specifications of NDH8304P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 70 mOhm @ 2.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 865pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 8-SSOT, SuperSOT-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Electrical Characteristics
-8
-6
-4
-2
0
-0.5
Figure 5. Transfer Characteristics.
1.6
1.4
1.2
0.8
0.6
-15
-12
Figure 3. On-Resistance Variation with
Figure 1. On-Region Characteristics.
-9
-6
-3
1
0
V
-50
0
DS
V
= -5V
GS
Temperature.
V
I
-25
D
=-4.5V
GS
= -2.7A
= -4.5V
V
-1
GS
-1
0
V
, GATE TO SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
-3.5
J
DS
, DRAIN-SOURCE VOLTAGE (V)
-3.0
2 5
-2.7
-1.5
-2.5
5 0
-2
T
J
= -55°C
7 5
-2.0
25°C
-2
1 0 0
-3
-1.5
125°C
1 2 5
-2.5
1 5 0
-4
1.8
1.6
1.4
1.2
0.8
0.6
0.4
Figure 4. On-Resistance Variation with Drain
1.2
1.1
0.9
0.8
0.7
0.6
0.5
2.5
1.5
0.5
1
1
Figure 6. Gate Threshold Variation with
Figure 2. On-Resistance Variation with Gate
- 5 0
2
1
0
0
V
GS
V
Current and Temperature.
GS
Temperature.
Voltage and Drain Current.
= -4.5V
- 2 5
= -2.0V
-3
-3
0
T , JUNCTION TEMPERATURE (°C)
J
I
D
I
D
, DRAIN CURRENT (A)
2 5
, DRAIN CURRENT (A)
-2.5
-6
-6
T = 125°C
J
5 0
-55°C
25°C
-2.7
-9
-9
7 5
-3.0
I
D
1 0 0
V
-3.5
DS
= -250µA
-12
-12
= V
NDH8304P Rev.C
G S
1 2 5
-4.5
1 5 0
-15
-15