SI4974DY-T1-E3 Vishay, SI4974DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4974DY-T1-E3
• Description: MOSFET DUAL N-CH 30V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4974DY-T1-E3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A, 4.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 16mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4974DY-T1-E3TR

Si4974DY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
0.4
0.2
0.0
10
40
1
0.0
- 50
Source-Drain Diode Forward Voltage
- 25
0.3
V
SD
0
T
J
- Source-to-Drain Voltage (V)
Threshold Voltage
T
= 150 °C
J
25
- Temperature (°C)
0.6
50
I
D
0.9
= 250 µA
75
Limited by R
0.01
100
0.1
T
10
J
1
0.1
100
= 25 °C
1.2
* V
Safe Operating Area, Junction-to-Case
GS
125
DS(on) *
> minimum V
V
DS
1.5
150
Single Pulse
- Drain-to-Source Voltage (V)
T
C
1
= 25 °C
GS
at which R
10
DS(on)
0.10
0.08
0.06
0.04
0.02
0.00
50
40
30
20
10
0
10
is specified
0
-3
On-Resistance vs. Gate-to-Source Voltage
1 ms
10 ms
100 ms
1 s
10 s
DC
10
-2
100
2
V
GS
- Gate-to-Source Voltage (V)
Single Pulse Power
10
-1
4
Time (s)
I
S09-0228-Rev. D, 09-Feb-09
D
= 8 A
1
Document Number: 73052
6
10
8
100
600
10