SI4974DY-T1-E3 Vishay, SI4974DY-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI4974DY-T1-E3
• Description: MOSFET DUAL N-CH 30V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4974DY-T1-E3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A, 4.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 16mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4974DY-T1-E3TR

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73052
S09-0228-Rev. D, 09-Feb-09
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
0.05
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.02
Duty Cycle = 0.5
0.2
0.1
Single Pulse
10
-3
10
Single Pulse
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
10
1
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
A
t
1
1
= P
Vishay Siliconix
t
2
DM
Z
thJA
100
thJA
t
t
Si4974DY
(t)
1
2
= 90 °C/W
www.vishay.com
600
10
5